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NTJS3151PT2G - onsemi

Description: Leading Trench Technology for Low RDS(ON) Extending Battery Life SC−88 Small Outline (2x2 mm, SC70−6 Equivalent) Gate Diodes for ESD Protection NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

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PCB Footprints
NTJS3151PT2G - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - SC−88 2.00x1.25x0.90, 0.65P CASE 419B−02 ISSUE Z
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3D Models
NTJS3151PT2G - onsemi  - 3D model - SOT23 (6-Pin) - SC−88 2.00x1.25x0.90, 0.65P CASE 419B−02 ISSUE Z
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NTJS3151PT2G Details

  • Manufacturer Part Number:

    NTJS3151PT2G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-88/SC70-6/SOT-363 6 LEAD

  • Package Description:

    SC-88, SC-70-6, 6 PIN

  • Pin Count:

    6

  • Manufacturer Package Code:

    419B-02

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.95

  • Configuration:

    SINGLE WITH BUILT-IN DIODE AND RESISTOR

  • DS Breakdown Voltage-Min:

    12 V

  • Drain Current-Max (ID):

    2.7 A

  • Drain-source On Resistance-Max:

    0.06 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.625 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTJS3151PT2G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's power handling at high temperatures.
  • The SOA is not explicitly stated in the datasheet. However, it's recommended to operate the device within the specified voltage and current limits to ensure reliability and prevent damage.
  • Yes, the NTJS3151PT2G is AEC-Q101 qualified, making it suitable for automotive and high-reliability applications. However, ensure that the device is used within its specified operating conditions and follows the recommended application guidelines.
  • Follow proper ESD handling procedures during assembly and storage. The device has built-in ESD protection, but it's still important to handle the device by the body or use an ESD wrist strap to prevent damage.

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NTJS3151PT2G Overview

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Part Image NTJS3151PT1 onsemi

Small Signal Field-Effect Transistor, 2.7A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET