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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTJS3151PT2G
onsemi
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1 | Leading Trench Technology for Low RDS(ON) Extending Battery Life SC−88 Small Outline (2x2 mm, SC70−6 Equivalent) Gate Diodes for ESD Protection NV Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC−Q101 Qualified andPPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHSCompliant | SOT23 (6-Pin) | NTJS3151PT2G |
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NTJS3157NT1G
onsemi
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1 | Fast switching for increased circuit efficiency; SC-88 Small Outline (2x2 mm) for Maximum Circuit Board Utilization, Same as SC-70-6; Leading Trench Technology for Low RDS(on) Extending Battery Life | SOT23 (6-Pin) | NTJS3157NT1G |
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NTJS3151PT1G
onsemi
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1 | Leading Trench Technology for Low RDS(on) Extending Battery Life; SC-88 Small Outline (2x2 mm, SC70-6 Equivalent); Gate Diodes for ESD Protection; RoHS Compliant | SOT23 (6-Pin) | NTJS3151PT1G |
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NTJS3157NT1
onsemi
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1 | Small Signal Field-Effect Transistor, 3.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | NTJS3157NT1 |
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NTJS3151PT1
onsemi
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1 | Small Signal Field-Effect Transistor, 2.7A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | NTJS3151PT1 |
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NTJS3157NT2G
Rochester Electronics LLC
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1 | 3200mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, 2 X 2 MM, LEAD FREE, CASE 419B-02, SC-88, SC-70-6, 6 PIN | NTJS3157NT2G |
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NTJS3157NT2G
onsemi
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1 | Small Signal Field-Effect Transistor, 3.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | NTJS3157NT2G |
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NTJS3157NT4G
onsemi
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1 | Small Signal Field-Effect Transistor, 3.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | NTJS3157NT4G |
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NTJS3157NT2
onsemi
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1 | Small Signal Field-Effect Transistor, 3.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | NTJS3157NT2 |
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NTJS3157NT4
onsemi
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1 | Small Signal Field-Effect Transistor, 3.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | NTJS3157NT4 |
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NTJS3151PT2
onsemi
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1 | Small Signal Field-Effect Transistor, 2.7A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | NTJS3151PT2 |
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