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NTJS3151PT1G - onsemi

Description: Leading Trench Technology for Low RDS(on) Extending Battery Life; SC-88 Small Outline (2x2 mm, SC70-6 Equivalent); Gate Diodes for ESD Protection; RoHS Compliant

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NTJS3151PT1G - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - SC-88 SC70-6 CASE 419B-02 ISSUE Y
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3D Models
NTJS3151PT1G - onsemi  - 3D model - SOT23 (6-Pin) - SC-88 SC70-6 CASE 419B-02 ISSUE Y
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NTJS3151PT1G Details

  • Manufacturer Part Number:

    NTJS3151PT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-88/SC70-6/SOT-363 6 LEAD

  • Package Description:

    SC-88, SC-70-6, 6 PIN

  • Pin Count:

    6

  • Manufacturer Package Code:

    419B-02

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.95

  • Configuration:

    SINGLE WITH BUILT-IN DIODE AND RESISTOR

  • DS Breakdown Voltage-Min:

    12 V

  • Drain Current-Max (ID):

    2.7 A

  • Drain-source On Resistance-Max:

    0.06 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.625 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTJS3151PT1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's power handling at high temperatures.
  • The SOA is not explicitly stated in the datasheet. However, it can be estimated by considering the device's voltage, current, and power ratings. Consult with onsemi's application engineers for specific guidance.
  • Yes, the NTJS3151PT1G is qualified for automotive and high-reliability applications. However, additional testing and validation may be required to meet specific industry standards.
  • Follow proper ESD handling procedures during assembly and storage. Use ESD-protective packaging and handling equipment. The device has built-in ESD protection, but additional external protection may be necessary depending on the application.

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NTJS3151PT1G Overview

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Part Image NTJS3151PT1 onsemi

Small Signal Field-Effect Transistor, 2.7A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET