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NTZD3155CT1G - onsemi

Description: Leading Trench Technology for Low RDS(on) Performance; High Efficiency System Performance; Low Threshold Voltage; ESD Protected Gate; Small Footprint 1.6 x 1.6 mm; RoHS Compliant

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NTZD3155CT1G - onsemi PCB footprint - SO Transistor Flat Lead - SO Transistor Flat Lead - SOT-563 6 LEAD CASE 463A-01 ISSUE O
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NTZD3155CT1G - onsemi  - 3D model - SO Transistor Flat Lead - SOT-563 6 LEAD CASE 463A-01 ISSUE O
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NTZD3155CT1G Details

  • Manufacturer Part Number:

    NTZD3155CT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-563, 6 LEAD

  • Package Description:

    SOT-563, 6 PIN

  • Pin Count:

    6

  • Manufacturer Package Code:

    463A-01

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6.8

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    0.54 A

  • Drain-source On Resistance-Max:

    0.55 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    20 pF

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL AND P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.25 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTZD3155CT1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's power handling at high temperatures.
  • The NTZD3155CT1G has internal ESD protection, but it's still recommended to follow standard ESD handling precautions during assembly and handling. Use an ESD wrist strap or mat, and ensure the device is stored in an anti-static bag or container.
  • Yes, the NTZD3155CT1G is AEC-Q101 qualified, making it suitable for automotive and high-reliability applications. However, ensure you follow the recommended operating conditions and derating guidelines.
  • Use thermal imaging or an infrared thermometer to identify hotspots. Check for proper heat sinking, thermal interface material, and PCB layout. Verify that the device is not operating outside its recommended temperature range.

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NTZD3155CT1G Overview

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Part Image NTZD3155CT5G onsemi

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