Part Image

NVMFS5C682NLAFT1G - onsemi

Description: Industry Standard Small Footprint 5x6mm Package; Low QG and Gate Capacitance; Low RDS(on); NVMFS5C682NLWF − Wettable Flank Option; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

Download NVMFS5C682NLAFT1G Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
NVMFS5C682NLAFT1G - onsemi  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

NVMFS5C682NLAFT1G Details

  • Manufacturer Part Number:

    NVMFS5C682NLAFT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL / DFN-5

  • Package Description:

    SO-8FL, DFN5, 6 PIN

  • Manufacturer Package Code:

    488AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Date Of Intro:

    2017-02-23

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    43 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    25 A

  • Drain-source On Resistance-Max:

    0.0315 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    28 W

  • Pulsed Drain Current-Max (IDM):

    130 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFS5C682NLAFT1G Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for NVMFS5C682NLAFT1G is -40°C to 125°C.
  • To ensure data integrity during power cycling, it is recommended to use a voltage supervisor or a power-on reset circuit to ensure that the device is properly initialized before accessing the memory.
  • The recommended storage condition for NVMFS5C682NLAFT1G is in a dry, cool place, away from direct sunlight and moisture, with a temperature range of -40°C to 125°C.
  • No, NVMFS5C682NLAFT1G is not designed to operate in radiation-intensive environments. If you need a radiation-hardened device, you should consider a different part number.
  • In case of errors during programming or erase operations, it is recommended to retry the operation up to a maximum of three times. If the error persists, the device may need to be replaced.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

NVMFS5C682NLAFT1G Overview

Use the download button to access the NVMFS5C682NLAFT1G 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like NVMFS, or try a keyword search, such as Power Field-Effect Transistors

Parts related to NVMFS5C682NLAFT1G

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview

NVMFS5C682NLAFT1G Alternates

Showing results

Image Part Number Model
Part Image NVMFS5C682NLWFAFT1G onsemi

Power Field-Effect Transistor, 25A I(D), 60V, 0.0315ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image NVMFS5C682NLT1G onsemi

Power Field-Effect Transistor, 25A I(D), 60V, 0.0315ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image NVMFS5C682NLT3G onsemi

Power Field-Effect Transistor, 25A I(D), 60V, 0.0315ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image NVMFS5C682NLWFT3G onsemi

Power Field-Effect Transistor, 25A I(D), 60V, 0.0315ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image NVMFS5C682NLWFT1G onsemi

Power Field-Effect Transistor, 25A I(D), 60V, 0.0315ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

For a full list of alternate parts for NVMFS5C682NLAFT1G, check out Findchips.com