Part Image

PDTB123YT,215 - Nexperia

Description: PNP Transistor,100mA,PDTB123YT

Download PDTB123YT,215 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
PDTB123YT,215 - Nexperia PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT23 (TO-236AB)-2
click to zoom
3D Models
PDTB123YT,215 - Nexperia  - 3D model - SOT23 (3-Pin) - SOT23 (TO-236AB)-2
click to zoom

PDTB123YT,215 Details

  • Manufacturer Part Number:

    PDTB123YT,215

  • Brand Name:

    Nexperia

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-236

  • Pin Count:

    3

  • Manufacturer Package Code:

    SOT23

  • Country Of Origin:

    Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Date Of Intro:

    2017-02-01

  • Manufacturer:

    Nexperia

  • YTEOL:

    7

  • Additional Feature:

    BUILT-IN BIAS RESISTOR RATIO IS 4.55

  • Collector Current-Max (IC):

    0.5 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SINGLE WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    70

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Reference Standard:

    IEC-60134

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

PDTB123YT,215 Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2 oz copper thickness is recommended.
  • Ensure proper heat sinking, avoid overheating, and follow the recommended operating conditions. The device is rated for operation up to 150°C, but derating is necessary above 125°C.
  • The maximum allowed voltage on the input pins is 6.5V, exceeding this may cause damage to the device.
  • Yes, the PDTB123YT,215 is suitable for high-frequency switching applications up to 100 kHz. However, ensure proper PCB layout and decoupling to minimize electromagnetic interference (EMI).
  • Follow standard ESD handling procedures, use ESD-protective packaging, and ensure that the device is not exposed to electrostatic discharge during assembly.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

PDTB123YT,215 Overview

Use the download button to access the PDTB123YT,215 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like PDTB1, or try a keyword search, such as Small Signal Bipolar Transistors

About Nexperia

Nexperia is a leading global player in the semiconductor industry. Specializing in essential electronic components, Nexperia offers a diverse range of products including discrete components, MOSFETs, logic ICs, and analog ICs. These components are integral to a multitude of applications across automotive, industrial, consumer electronics, and computing sectors, where reliability, performance, and efficiency are paramount.

Parts related to PDTB123YT,215

Showing 0 results

PDTB123YT,215 Alternates

Showing results

Image Part Number Model
Part Image PDTB123YT Nexperia

Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB

Part Image PDTB123YT,235 Nexperia

Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB

Part Image PDTB123YT NXP Semiconductors

Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB

Part Image PDTB123YT,215 NXP Semiconductors

Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB

Part Image PDTB123YT,235 NXP Semiconductors

Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB

For a full list of alternate parts for PDTB123YT,215, check out Findchips.com