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SCTW60N120G2AG - STMicroelectronics

Description: Automotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mΩ (typ., TJ = 25 °C) in an HiP247 package

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SCTW60N120G2AG - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - SCTW60N120G2AG
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SCTW60N120G2AG Details

  • Manufacturer Part Number:

    SCTW60N120G2AG

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2020-05-20

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    52 A

  • Drain-source On Resistance-Max:

    0.058 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    18 pF

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    200 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    388 W

  • Pulsed Drain Current-Max (IDM):

    156 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

SCTW60N120G2AG Frequently Asked Questions (FAQs)

  • STMicroelectronics provides a recommended PCB layout in their application note AN504, which includes guidelines for thermal pad connection, copper thickness, and thermal vias to ensure optimal thermal performance.
  • You can calculate the junction temperature (Tj) using the formula: Tj = Tc + (Rthjc * Pd), where Tc is the case temperature, Rthjc is the junction-to-case thermal resistance, and Pd is the power dissipation. The thermal resistance values can be found in the datasheet.
  • The maximum allowed voltage for the gate-source (Vgs) and gate-drain (Vgd) pins is ±20V, as specified in the datasheet. Exceeding this voltage may damage the device.
  • To avoid oscillations, ensure that the gate driver is properly designed and matched to the device's input capacitance. A gate resistor (Rg) between 1-10 ohms can help dampen oscillations. Additionally, a low-inductance layout and proper decoupling of the power supply are essential.
  • The recommended gate-source voltage (Vgs) for optimal switching performance is typically between 10-15V, as specified in the datasheet. This ensures the device is fully enhanced and minimizes switching losses.

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SCTW60N120G2AG Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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