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SI1304BDL-T1-E3 - Vishay

Description: SI1304BDL-T1-E3, N-channel MOSFET Transistor 0.85 A 30 V, 3-Pin SC-70

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PCB Footprints
SI1304BDL-T1-E3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - sot-3 3 lead
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3D Models
SI1304BDL-T1-E3 - Vishay  - 3D model - SOT23 (3-Pin) - sot-3 3 lead
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SI1304BDL-T1-E3 Details

  • Manufacturer Part Number:

    SI1304BDL-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    ROHS COMPLIANT, SC-70, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    0.85 A

  • Drain-source On Resistance-Max:

    0.27 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.37 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

SI1304BDL-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI1304BDL-T1-E3 is a 0603 package with a land pattern of 0.8mm x 0.8mm. It's essential to follow the recommended footprint to ensure proper soldering and thermal performance.
  • To ensure the SI1304BDL-T1-E3 operates within its SOA, monitor the device's voltage, current, and power dissipation. Keep the voltage below the maximum rating (30V), current below the maximum rating (1.3A), and power dissipation below the maximum rating (1.3W). Also, ensure proper thermal management and heat sinking.
  • The maximum junction temperature (Tj) for the SI1304BDL-T1-E3 is 150°C. It's essential to keep the junction temperature below this rating to ensure the device's reliability and longevity.
  • Yes, the SI1304BDL-T1-E3 is suitable for high-frequency applications. However, it's essential to consider the device's parasitic capacitance, inductance, and resistance when designing the circuit. Additionally, ensure the device is properly decoupled and bypassed to minimize high-frequency noise and oscillations.
  • To prevent electrostatic discharge (ESD) damage, handle the SI1304BDL-T1-E3 with ESD-protective equipment, such as wrist straps, mats, and bags. Ensure the workspace is ESD-safe, and avoid touching the device's pins or leads.

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SI1304BDL-T1-E3 Overview

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