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SI1422DH-T1-GE3 - Vishay

Description: MOSFET 12V 4A N-CH MOSFET

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PCB Footprints
SI1422DH-T1-GE3 - Vishay PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - SC-70 6 LEADS
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3D Models
SI1422DH-T1-GE3 - Vishay  - 3D model - SOT23 (6-Pin) - SC-70 6 LEADS
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SI1422DH-T1-GE3 Details

  • Manufacturer Part Number:

    SI1422DH-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, SC-70, 6 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    12 V

  • Drain Current-Max (ID):

    4 A

  • Drain-source On Resistance-Max:

    0.026 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.8 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI1422DH-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI1422DH-T1-GE3 is a standard SOT23-6 package with a 1.8mm x 1.35mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
  • To ensure proper biasing, connect the input pins (VIN and VOUT) to a stable voltage source, and decouple the input and output pins with 10uF and 1uF capacitors, respectively. Additionally, ensure the enable pin (EN) is tied to a logic-level signal or grounded for proper operation.
  • The SI1422DH-T1-GE3 has an operating temperature range of -40°C to 125°C. However, it's recommended to operate the device within a temperature range of -20°C to 85°C for optimal performance and reliability.
  • Yes, the SI1422DH-T1-GE3 is AEC-Q100 qualified, making it suitable for automotive and high-reliability applications. However, it's essential to follow the recommended operating conditions and design guidelines to ensure the device meets the required reliability standards.
  • To prevent electrostatic discharge (ESD) damage, handle the SI1422DH-T1-GE3 with an ESD wrist strap or mat, and ensure the workspace is ESD-protected. Avoid touching the device's pins or handling the device in environments with high electrostatic potential.

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SI1422DH-T1-GE3 Overview

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Part Image SI1442DH-T1-GE3 Vishay Intertechnologies

Power Field-Effect Transistor, 4A I(D), 12V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET