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SI2304DDS-T1-GE3 - Vishay

Description: Vishay SI2304DDS-T1-GE3 N-channel MOSFET Transistor, 3.6 A, 30 V, 3-Pin TO-236

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PCB Footprints
SI2304DDS-T1-GE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - -SOT-23
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SI2304DDS-T1-GE3 - Vishay  - 3D model - SOT23 (3-Pin) - -SOT-23
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SI2304DDS-T1-GE3 Details

  • Manufacturer Part Number:

    SI2304DDS-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3

  • Country Of Origin:

    USA

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    3.3 A

  • Drain-source On Resistance-Max:

    0.06 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    17 pF

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -50 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.7 W

  • Pulsed Drain Current-Max (IDM):

    15 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    55 ns

  • Turn-on Time-Max (ton):

    95 ns

SI2304DDS-T1-GE3 Frequently Asked Questions (FAQs)

  • A good PCB layout for the SI2304DDS-T1-GE3 should include a solid ground plane, wide copper traces for power and ground, and a thermal relief pattern under the device to facilitate heat dissipation. A minimum of 2 oz copper thickness is recommended.
  • To ensure reliable operation in high-temperature environments, ensure proper heat sinking, use a thermally conductive interface material, and follow the recommended PCB layout guidelines. Additionally, consider derating the device's power handling capabilities according to the temperature derating curve provided in the datasheet.
  • The SI2304DDS-T1-GE3 is a sensitive semiconductor device and requires proper ESD protection during handling and assembly. Use an ESD wrist strap or mat, and follow standard ESD handling procedures to prevent damage. The device is also sensitive to moisture, so ensure proper storage and handling in a dry environment.
  • Yes, the SI2304DDS-T1-GE3 is suitable for high-frequency switching applications. However, ensure that the device is properly bypassed with capacitors and that the PCB layout is optimized for high-frequency operation. Additionally, consider the device's switching characteristics and ensure that the application's switching frequency is within the device's recommended operating range.
  • The recommended soldering conditions for the SI2304DDS-T1-GE3 are a peak temperature of 260°C (500°F) for a maximum of 10 seconds. For rework, use a low-temperature soldering iron (less than 350°F) and avoid applying excessive heat or force, which can damage the device.

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SI2304DDS-T1-GE3 Overview

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