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SI2312BDS-T1-E3 - Vishay

Description: N-Channel 20 V (D-S) MOSFET

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Symbol
SI2312BDS-T1-E3 - Vishay - PCB symbol
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PCB Footprints
SI2312BDS-T1-E3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SI2312BDS-T1-E3
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3D Models
SI2312BDS-T1-E3 - Vishay - 3D model - SOT23 (3-Pin) - SI2312BDS-T1-E3
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SI2312BDS-T1-E3 Details

  • Manufacturer Part Number:

    SI2312BDS-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    SOT-23, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    8.45 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    3.9 A

  • Drain-source On Resistance-Max:

    0.031 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.75 W

  • Pulsed Drain Current-Max (IDM):

    15 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    IEC-61249-2-21

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    70 ns

  • Turn-on Time-Max (ton):

    60 ns

SI2312BDS-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI2312BDS-T1-E3 is a 6-pin SOT23 package with a 2.9mm x 1.6mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
  • To ensure reliable operation in high-temperature environments, it is recommended to derate the device's power dissipation according to the thermal derating curve provided in the datasheet. Additionally, ensure good thermal conduction between the device and the PCB, and consider using a heat sink if necessary.
  • The maximum allowed voltage on the enable pin (EN) of the SI2312BDS-T1-E3 is 6V. Exceeding this voltage may damage the device.
  • Yes, the SI2312BDS-T1-E3 can be used in switching regulator applications. However, ensure that the device is operated within its recommended operating conditions and that the switching frequency is within the device's specified range.
  • The typical turn-on and turn-off time for the SI2312BDS-T1-E3 is around 10-20ns. However, this may vary depending on the specific application and operating conditions.

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SI2312BDS-T1-E3 Overview

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SI2312BDS-T1-E3 Alternates

Showing results

Image Part Number Model
Part Image SI2312DS Vishay Siliconix

Power Field-Effect Transistor, 3.77A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Part Image SI2312BDS-T1-E3 Vishay Siliconix

Power Field-Effect Transistor, 3.9A I(D), 20V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
Part Image SI2312BDS-T1-GE3 Vishay Intertechnologies

Power Field-Effect Transistor, 3.9A I(D), 20V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
Part Image SI2312DS-T1 Vishay Siliconix

Small Signal Field-Effect Transistor, 3.77A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Part Image SI2312DS-T1-E3 Vishay Siliconix

Small Signal Field-Effect Transistor, 3.77A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
For a full list of alternate parts for SI2312BDS-T1-E3, check out Findchips.com