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SI2315BDS-T1-E3 - Vishay

Description: SI2315BDS-T1-E3, P-channel MOSFET Transistor 3 A 12 V, 3-Pin TO-236

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Symbol
SI2315BDS-T1-E3 - Vishay - PCB symbol
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PCB Footprints
SI2315BDS-T1-E3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236)
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3D Models
SI2315BDS-T1-E3 - Vishay - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236)
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SI2315BDS-T1-E3 Details

  • Manufacturer Part Number:

    SI2315BDS-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-236, SOT-23, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    12 V

  • Drain Current-Max (ID):

    3 A

  • Drain-source On Resistance-Max:

    0.05 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    200 pF

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.75 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

SI2315BDS-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI2315BDS-T1-E3 is a 5-pin SOT23 package with a 1.5mm x 2.5mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
  • To ensure reliable operation in high-temperature environments, ensure that the device is operated within its specified temperature range (-40°C to 150°C). Additionally, consider using thermal management techniques such as heat sinks or thermal interfaces to reduce junction temperatures.
  • The maximum allowed voltage on the input pins of the SI2315BDS-T1-E3 is 5.5V. Exceeding this voltage may cause damage to the device.
  • Yes, the SI2315BDS-T1-E3 is suitable for high-frequency applications up to 1 GHz. However, ensure that the device is properly decoupled and that the PCB layout is optimized for high-frequency operation.
  • To prevent ESD damage, handle the SI2315BDS-T1-E3 with ESD-protective equipment and follow proper ESD handling procedures. Ensure that the device is stored in an ESD-protective package when not in use.

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SI2315BDS-T1-E3 Overview

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SI2315BDS-T1-E3 Alternates

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Part Image SI2315BDS Vishay Intertechnologies

Small Signal Field-Effect Transistor, 3A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236