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SI2316BDS-T1-E3 - Vishay

Description: MOSFETs 30V 4.5A 1.66W

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Symbol
SI2316BDS-T1-E3 - Vishay - PCB symbol
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PCB Footprints
SI2316BDS-T1-E3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236): 3-LEAD
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3D Models
SI2316BDS-T1-E3 - Vishay - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236): 3-LEAD
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SI2316BDS-T1-E3 Details

  • Manufacturer Part Number:

    SI2316BDS-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-236, SOT-23, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    4.5 A

  • Drain-source On Resistance-Max:

    0.05 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    37 pF

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.66 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    28.5 ns

  • Turn-on Time-Max (ton):

    23.25 ns

SI2316BDS-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI2316BDS-T1-E3 is a 3-pin SOT23 package with a 1.3mm x 1.3mm body size. A minimum pad size of 0.6mm x 0.6mm is recommended for each pin.
  • To ensure proper soldering, use a soldering iron with a temperature of 260°C (500°F) and a solder with a melting point of 220°C (428°F). Apply a small amount of solder to the pads and reflow according to the recommended soldering profile.
  • The SI2316BDS-T1-E3 has an operating temperature range of -40°C to 150°C (-40°F to 302°F). However, it's recommended to operate the device within a temperature range of -20°C to 125°C (-4°F to 257°F) for optimal performance.
  • Yes, the SI2316BDS-T1-E3 is suitable for high-reliability applications. It's built with a robust design and undergoes rigorous testing to ensure high reliability and low defect rates.
  • To prevent electrostatic discharge (ESD) damage, handle the SI2316BDS-T1-E3 with an ESD wrist strap or mat, and ensure the workspace is ESD-protected. Avoid touching the device's pins or handling it in a way that could generate static electricity.

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SI2316BDS-T1-E3 Overview

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SI2316BDS-T1-E3 Alternates

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Part Image SI2304DDS-T1-GE3 Vishay Siliconix

Power Field-Effect Transistor, 3.3A I(D), 30V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
Part Image SI2304DDS-T1-BE3 Vishay Intertechnologies

Power Field-Effect Transistor, 3.3A I(D), 30V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Part Image PJA3402_R2_00001 PanJit Semiconductor

Power Field-Effect Transistor, 4.4A I(D), 30V, 0.048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Part Image SI2316BDS-T1-E3 Vishay Siliconix

Power Field-Effect Transistor, 4.5A I(D), 30V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Part Image SI2316BDS-T1-GE3 Vishay Intertechnologies

Power Field-Effect Transistor, 4.5A I(D), 30V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
For a full list of alternate parts for SI2316BDS-T1-E3, check out Findchips.com