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SI2316DS-T1-E3 - Vishay

Description: MOSFET 30V 3.4A 0.96W 50mohm @ 10V

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PCB Footprints
SI2316DS-T1-E3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - -SOT-23
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3D Models
SI2316DS-T1-E3 - Vishay  - 3D model - SOT23 (3-Pin) - -SOT-23
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SI2316DS-T1-E3 Details

  • Manufacturer Part Number:

    SI2316DS-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    ROHS COMPLIANT PACKAGE-3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    2.9 A

  • Drain-source On Resistance-Max:

    0.05 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.96 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI2316DS-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI2316DS-T1-E3 is a 6-pin SOT23 package with a 1.5mm x 1.5mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for each pin.
  • To ensure proper soldering, use a soldering iron with a temperature of 250°C to 260°C. Apply a small amount of solder paste to the PCB pads and place the device. Use a reflow oven or a hot air gun to solder the device. Avoid overheating or applying excessive force, which can damage the device.
  • The SI2316DS-T1-E3 has an operating temperature range of -40°C to 150°C. However, the device's performance and reliability may degrade if operated at the extreme ends of this range. It's recommended to operate the device within a temperature range of -20°C to 125°C for optimal performance.
  • Yes, the SI2316DS-T1-E3 is qualified for automotive and high-reliability applications. It meets the requirements of AEC-Q101 and is manufactured using automotive-grade processes. However, it's essential to follow the recommended application guidelines and ensure the device is used within its specified operating conditions.
  • To prevent electrostatic discharge (ESD) damage, handle the SI2316DS-T1-E3 with ESD-protective equipment, such as wrist straps, mats, or bags. Ensure the workspace is ESD-protected, and avoid touching the device's pins or exposed die. If you must handle the device, ground yourself by touching a grounded object before handling the device.

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SI2316DS-T1-E3 Overview

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Part Image SI2316DS-T1-E3 Vishay Siliconix

Small Signal Field-Effect Transistor, 2.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236