Part Image

SI2318DS-T1-BE3 - Vishay

Description: MOSFET N-CHANNEL 40-V (D-S)

Download SI2318DS-T1-BE3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
SI2318DS-T1-BE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - -SOT-23
click to zoom
3D Models
SI2318DS-T1-BE3 - Vishay  - 3D model - SOT23 (3-Pin) - -SOT-23
click to zoom

SI2318DS-T1-BE3 Details

  • Manufacturer Part Number:

    SI2318DS-T1-BE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-236, SOT-23, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    3 A

  • Drain-source On Resistance-Max:

    0.045 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    45 pF

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI2318DS-T1-BE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI2318DS-T1-BE3 is a 6-pin SOT23 package with a 2.9mm x 1.6mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for each pin.
  • To ensure proper biasing, connect the input pins (VIN and VCC) to a stable voltage source, and decouple them with a 10uF capacitor to ground. Additionally, ensure the output pin (VOUT) is connected to a load impedance that meets the recommended operating conditions.
  • The SI2318DS-T1-BE3 has an operating temperature range of -40°C to 125°C. However, it's recommended to operate the device within a temperature range of -20°C to 85°C for optimal performance and reliability.
  • Yes, the SI2318DS-T1-BE3 is qualified for automotive and high-reliability applications. It meets the AEC-Q100 standard for automotive grade and is suitable for use in harsh environments.
  • To prevent ESD damage, handle the SI2318DS-T1-BE3 with an anti-static wrist strap or mat, and ensure the workspace is ESD-protected. Avoid touching the device's pins or handling it in a way that could generate static electricity.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SI2318DS-T1-BE3 Overview

Use the download button to access the SI2318DS-T1-BE3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SI231, or try a keyword search, such as Power Field-Effect Transistors

Parts related to SI2318DS-T1-BE3

Showing 0 results

SI2318DS-T1-BE3 Alternates

Showing results

Image Part Number Model
Part Image SI2318DS-T1-E3 Vishay Intertechnologies

Power Field-Effect Transistor, 3A I(D), 40V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image SI2318CDS-T1-GE3 Vishay Siliconix

Power Field-Effect Transistor, 5.6A I(D), 40V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB