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SI2318DS-T1-E3 - Vishay

Description: VISHAY - SI2318DS-T1-E3 - N CHANNEL MOSFET, 40V, 3.9A, TO-236, FULL REEL

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PCB Footprints
SI2318DS-T1-E3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - TO-236
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3D Models
SI2318DS-T1-E3 - Vishay  - 3D model - SOT23 (3-Pin) - TO-236
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SI2318DS-T1-E3 Details

  • Manufacturer Part Number:

    SI2318DS-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-236, SOT-23, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    3 A

  • Drain-source On Resistance-Max:

    0.045 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    45 pF

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI2318DS-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI2318DS-T1-E3 is a 6-pin SOT23 package with a 1.5mm x 1.5mm body size. The datasheet provides a recommended land pattern and soldering guidelines.
  • To ensure proper biasing, follow the recommended operating conditions outlined in the datasheet. Typically, this includes connecting the input pins to a stable voltage source, and ensuring the output pins are properly terminated. Consult the datasheet for specific biasing requirements.
  • The SI2318DS-T1-E3 has an operating temperature range of -40°C to 125°C. However, it's essential to note that the device's performance may degrade at extreme temperatures. Consult the datasheet for temperature-related specifications and derating guidelines.
  • The SI2318DS-T1-E3 is a commercial-grade device, but Vishay Intertechnologies offers other variants with enhanced reliability and automotive-grade options. Consult with a Vishay representative or the datasheet to determine the most suitable device for your specific application.
  • To prevent electrostatic discharge (ESD) damage, follow proper handling and storage procedures. Use an ESD wrist strap, mat, or workstation, and ensure all equipment is properly grounded. The datasheet provides additional ESD protection guidelines.

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SI2318DS-T1-E3 Overview

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Part Image SI2318CDS-T1-GE3 Vishay Intertechnologies

Power Field-Effect Transistor, 5.6A I(D), 40V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image SI2318CDS-T1-BE3 Vishay Intertechnologies

Power Field-Effect Transistor, 5.6A I(D), 40V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB