Part Image

SI2323CDS-T1-GE3 - Vishay

Description: Vishay SI2323CDS-T1-GE3 P-channel MOSFET Transistor, 6 A, 20 V, 3-Pin SOT-23

Download SI2323CDS-T1-GE3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
SI2323CDS-T1-GE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23-3
click to zoom
3D Models
SI2323CDS-T1-GE3 - Vishay  - 3D model - SOT23 (3-Pin) - SOT-23-3
click to zoom

SI2323CDS-T1-GE3 Details

  • Manufacturer Part Number:

    SI2323CDS-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    TO-236, SOT-23, 3 PIN

  • Country Of Origin:

    Germany

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    0.039 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    135 pF

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI2323CDS-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI2323CDS-T1-GE3 is a standard SOT23-6 package with a 1.5mm x 1.5mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
  • To ensure the SI2323CDS-T1-GE3 operates within its recommended operating conditions, maintain a supply voltage between 2.7V and 5.5V, and keep the junction temperature below 150°C. Also, ensure the input voltage does not exceed the maximum rating of 5.5V.
  • The SI2323CDS-T1-GE3 supports data rates up to 100 Mbps, making it suitable for high-speed applications.
  • To ensure ESD protection, handle the SI2323CDS-T1-GE3 with an anti-static wrist strap or mat, and store the device in an anti-static bag or container. Also, follow proper PCB design guidelines for ESD protection.
  • The SI2323CDS-T1-GE3 is rated for operation up to 125°C. However, for high-temperature applications above 125°C, consult with Vishay Intertechnologies or a qualified engineer to ensure the device meets the specific application requirements.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SI2323CDS-T1-GE3 Overview

Use the download button to access the SI2323CDS-T1-GE3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SI232, or try a keyword search, such as Small Signal Field-Effect Transistors

Parts related to SI2323CDS-T1-GE3

Showing 0 results