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SI2325DS-T1-BE3 - Vishay

Description: MOSFET P-CHANNEL 150-V (D-S)

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Symbol
SI2325DS-T1-BE3 - Vishay - PCB symbol
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PCB Footprints
SI2325DS-T1-BE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236)
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3D Models
SI2325DS-T1-BE3 - Vishay - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236)
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SI2325DS-T1-BE3 Details

  • Manufacturer Part Number:

    SI2325DS-T1-BE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-236, SOT-23, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    0.53 A

  • Drain-source On Resistance-Max:

    1.3 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    16 pF

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.75 W

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

SI2325DS-T1-BE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI2325DS-T1-BE3 is a 6-pin SOT23 package with a 2.9mm x 1.6mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
  • To ensure the SI2325DS-T1-BE3 operates within its recommended operating conditions, maintain a supply voltage between 2.7V and 5.5V, and keep the junction temperature below 150°C. Also, ensure the input voltage does not exceed the maximum rating of 5.5V.
  • The maximum current rating for the SI2325DS-T1-BE3 is 100mA per channel. Exceeding this rating may cause the device to overheat or fail.
  • To protect the SI2325DS-T1-BE3 from ESD damage, handle the device with an anti-static wrist strap or mat, and ensure the PCB is designed with ESD protection features such as TVS diodes or ESD protection arrays.
  • The typical propagation delay for the SI2325DS-T1-BE3 is around 10ns. However, this value may vary depending on the specific application and operating conditions.

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SI2325DS-T1-BE3 Overview

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