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SI2325DS-T1-E3 - Vishay

Description: SI2325DS-T1-E3, P-channel MOSFET Transistor 0.53 A 150 V, 3-Pin TO-236

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Symbol
SI2325DS-T1-E3 - Vishay - PCB symbol
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PCB Footprints
SI2325DS-T1-E3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236)
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3D Models
SI2325DS-T1-E3 - Vishay - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236)
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SI2325DS-T1-E3 Details

  • Manufacturer Part Number:

    SI2325DS-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-236, SOT-23, 3 PIN

  • Country Of Origin:

    Israel

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    7

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    0.53 A

  • Drain-source On Resistance-Max:

    1.3 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    16 pF

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.75 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

SI2325DS-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI2325DS-T1-E3 is a standard SOT23-6 package with a 1.8mm x 1.35mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
  • To ensure the SI2325DS-T1-E3 operates within the specified junction temperature range, provide adequate heat dissipation through a thermal pad or heat sink, and avoid excessive power dissipation. Monitor the device's thermal performance and adjust the design accordingly.
  • The maximum allowed voltage on the enable pin (EN) of the SI2325DS-T1-E3 is 6V. Exceeding this voltage may damage the device.
  • Yes, the SI2325DS-T1-E3 is qualified for automotive and high-reliability applications. However, it's essential to review the device's AEC-Q100 qualification and PPAP documentation to ensure compliance with specific industry standards.
  • To prevent ESD damage, handle the SI2325DS-T1-E3 with ESD-protective equipment, such as wrist straps, mats, or bags. Ensure the workspace is ESD-safe, and follow proper handling procedures to minimize the risk of ESD damage.

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SI2325DS-T1-E3 Overview

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To find more CAD model downloads similar to this part, try a partial part number search, like SI232, or try a keyword search, such as Small Signal Field-Effect Transistors

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