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SI2325DS-T1-GE3 - Vishay

Description: MOSFET -150V Vds 20V Vgs SOT-23

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Symbol
SI2325DS-T1-GE3 - Vishay - PCB symbol
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PCB Footprints
SI2325DS-T1-GE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236): 3-LEAD_1
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3D Models
SI2325DS-T1-GE3 - Vishay - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236): 3-LEAD_1
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SI2325DS-T1-GE3 Details

  • Manufacturer Part Number:

    SI2325DS-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-236, SOT-23, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6.5

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    0.53 A

  • Drain-source On Resistance-Max:

    1.3 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    16 pF

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.75 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

SI2325DS-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI2325DS-T1-GE3 is a standard SOT23-6 package with a 1.8mm x 1.35mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
  • To ensure the SI2325DS-T1-GE3 operates within the specified junction temperature range, provide adequate heat sinking, use a thermal pad or thermal interface material, and avoid excessive power dissipation. A maximum junction temperature of 150°C is recommended.
  • The recommended input capacitance for the SI2325DS-T1-GE3 is 10nF to 100nF. This range provides a good balance between noise filtering and signal integrity.
  • Yes, the SI2325DS-T1-GE3 is qualified for automotive and high-reliability applications. It meets the AEC-Q100 standard and is manufactured with automotive-grade processes and materials.
  • The SI2325DS-T1-GE3 has built-in ESD protection, but additional protection measures can be taken. Use ESD-sensitive handling procedures, and consider adding external ESD protection devices or circuitry to ensure device reliability.

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SI2325DS-T1-GE3 Overview

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