SI2329DS-T1-GE3 footprint, schematic symbol and 3D model by Vishay

Symbol

click to zoom

PCB Footprints

click to zoom

3D Models

click to zoom

Datasheet Download Datasheet
Stock & Prices Price & Stock for SI2329DS-T1-GE3
Part Number SI2329DS-T1-GE3
Manufacturer Vishay
Pin Count 3
Part Category MOSFET (P-Channel)
Package Category SOT23 (3-Pin)
Footprint Name SOT23 (3-Pin) - SOT-23 (TO-236)
Released Date Feb 7, 2018
Last Modified Date Mar 7, 2023 4:10 PM UTC
Pinout / Pin List Click Here (Member Only)

SI2329DS-T1-GE3 Details

Manufacturer Part Number:
SI2329DS-T1-GE3
Rohs Code:
Yes
Part Life Cycle Code:
Active
Package Description:
HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
ECCN Code:
EAR99
Manufacturer:
Vishay Intertechnologies
YTEOL:
7.07
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
8 V
Drain Current-Max (ID):
6 A
Drain-source On Resistance-Max:
0.03 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code:
TO-236AB
JESD-30 Code:
R-PDSO-G3
JESD-609 Code:
e3
Moisture Sensitivity Level:
1
Number of Elements:
1
Number of Terminals:
3
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
260
Polarity/Channel Type:
P-CHANNEL
Power Dissipation-Max (Abs):
2.5 W
Qualification Status:
Not Qualified
Surface Mount:
YES
Terminal Finish:
Matte Tin (Sn)
Terminal Form:
GULL WING
Terminal Position:
DUAL
Time@Peak Reflow Temperature-Max (s):
30
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON

SI2329DS-T1-GE3 Frequently Asked Questions (FAQs)

The recommended PCB footprint for the SI2329DS-T1-GE3 is a standard SOT23-6 package with a 1.8mm x 1.35mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
To ensure the SI2329DS-T1-GE3 operates within its recommended operating conditions, maintain a supply voltage between 2.7V and 5.5V, and keep the junction temperature (TJ) below 150°C. Also, ensure the input voltage does not exceed the maximum rating of 5.5V.
The maximum current rating for the SI2329DS-T1-GE3 is 100mA per channel. Exceeding this rating may cause the device to overheat or fail.
To prevent electrostatic discharge (ESD) damage, handle the SI2329DS-T1-GE3 with an ESD wrist strap or mat, and ensure the workspace is ESD-protected. Avoid touching the device's pins or handling it in environments with high electrostatic potential.
Store the SI2329DS-T1-GE3 in a dry, cool place with a temperature range of -40°C to 125°C. Avoid exposing the device to moisture, direct sunlight, or extreme temperatures.

Trust Checks

Expert Contribution

System Verified

Community Approved

SI2329DS-T1-GE3 Overview

Use the download button to access the SI2329DS-T1-GE3 schematic symbol, PCB footprint, and 3D model.

To find more CAD model downloads similar to this part, try a partial part number search, like SI232, or try a keyword search, such as Small Signal Field-Effect Transistors

Suggested Parts

If you searched for SI2329DS-T1-GE3, you might also be interested in these parts:

Part Number
NCV20071SN2T1G
SI1902CDL-T1-GE3
SM05T1G
STWD100NYWY3F
LTC6811HG-1#PBF
TG110-AEX50N5LF
35PFV150M8X10.5
MAX485EESA+
MCR18EZPF2201

Parts related to SI2329DS-T1-GE3

Showing 0 results


Please enter a minimum 3 letters or numbers
← Prev Next →

SI2329DS-T1-GE3 - Vishay

SI2329DS-T1-GE3 Details

SI2329DS-T1-GE3 Frequently Asked Questions (FAQs)

Trust Checks

SI2329DS-T1-GE3 Overview

Suggested Parts

Parts related to SI2329DS-T1-GE3