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SI2369DS-T1-BE3 - Vishay

Description: MOSFET P-CHANNEL 30-V (D-S)

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PCB Footprints
SI2369DS-T1-BE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236): 3-LEAD
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3D Models
SI2369DS-T1-BE3 - Vishay  - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236): 3-LEAD
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SI2369DS-T1-BE3 Details

  • Manufacturer Part Number:

    SI2369DS-T1-BE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-236, SOT-23, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    7.07

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    7.6 A

  • Drain-source On Resistance-Max:

    0.029 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    130 pF

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI2369DS-T1-BE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI2369DS-T1-BE3 is a 2x2mm QFN package with a 0.5mm pitch. A minimum of 4 thermal vias under the exposed pad is recommended for optimal thermal performance.
  • To ensure the device operates within the recommended operating conditions, ensure the input voltage is within the specified range (1.8V to 5.5V), and the junction temperature is below the maximum rating (150°C). Also, ensure proper thermal design and heat dissipation to prevent overheating.
  • The maximum current rating for the SI2369DS-T1-BE3 is 2A per channel. However, it's essential to consider the power dissipation and thermal design to ensure the device operates within the recommended operating conditions.
  • To implement overcurrent protection for the SI2369DS-T1-BE3, you can use an external current sense resistor and a comparator or a dedicated overcurrent protection IC. The device also has a built-in overcurrent protection feature, which can be enabled by connecting the OC pin to a suitable resistor and capacitor network.
  • For optimal performance and minimal electromagnetic interference (EMI), it's recommended to follow a star-topology layout, keep the input and output traces separate, and use a solid ground plane. Also, minimize the length of the traces and use a 50Ω impedance-controlled trace for the high-frequency signals.

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SI2369DS-T1-BE3 Overview

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