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SIHFL9110TR-GE3 - Vishay

Description: MOSFET 100V Vds 20V Vgs SOT-223

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SIHFL9110TR-GE3 - Vishay PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - ECE-A1EN100UI
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SIHFL9110TR-GE3 - Vishay  - 3D model - SOT223 (3-Pin) - ECE-A1EN100UI
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SIHFL9110TR-GE3 Details

  • Manufacturer Part Number:

    SIHFL9110TR-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-223, 3 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    7

  • Additional Feature:

    AVALANCHE RATED

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    1.1 A

  • Drain-source On Resistance-Max:

    1.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    18 pF

  • JEDEC-95 Code:

    TO-261AA

  • JESD-30 Code:

    R-PSSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation Ambient-Max:

    2 W

  • Power Dissipation-Max (Abs):

    3.1 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIHFL9110TR-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for SIHFL9110TR-GE3 is a pad size of 2.5 mm x 1.5 mm with a 0.5 mm spacing between pads. It's essential to follow the recommended footprint to ensure proper thermal performance and to prevent overheating.
  • To ensure reliability in high-temperature applications, it's crucial to follow the recommended derating curves for the device. Additionally, ensure proper thermal management, such as using a heat sink or thermal interface material, and avoid exceeding the maximum junction temperature (Tj) of 150°C.
  • The maximum allowed voltage transient for SIHFL9110TR-GE3 is 1.5 times the maximum rated voltage (Vds) for a duration of less than 10 ms. Exceeding this limit may cause damage to the device.
  • Yes, you can use SIHFL9110TR-GE3 in a parallel configuration to increase current handling. However, it's essential to ensure that the devices are properly matched and that the current sharing is balanced to prevent overheating and reduce reliability.
  • To prevent moisture damage, store SIHFL9110TR-GE3 in a dry, cool place with a relative humidity of 50% or less. Avoid storing the devices in direct sunlight or near heat sources.

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