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SQ2309CES-T1_GE3 - Vishay

Description: MOSFET Automotive P-Channel 60 V (D-S) 175C MOSFET SOT-23 , 370 mohm a. 10V, 500 mohm a. 4.5V

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PCB Footprints
SQ2309CES-T1_GE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236): 3-LEAD*
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3D Models
SQ2309CES-T1_GE3 - Vishay  - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236): 3-LEAD*
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SQ2309CES-T1_GE3 Details

  • Manufacturer Part Number:

    SQ2309CES-T1_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-23, 3 PIN

  • Country Of Origin:

    Germany

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    2.3 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    1.7 A

  • Drain-source On Resistance-Max:

    0.37 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    30 pF

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2 W

  • Pulsed Drain Current-Max (IDM):

    6.8 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    32 ns

  • Turn-on Time-Max (ton):

    22 ns

SQ2309CES-T1_GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SQ2309CES-T1_GE3 is a rectangle with dimensions of 2.5 mm x 1.3 mm, with a 0.5 mm radius corner and a 0.3 mm pad spacing. It's essential to follow the recommended footprint to ensure proper soldering and thermal performance.
  • To handle thermal management, ensure a good thermal connection between the device and the PCB. Use a thermal pad or a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K. Keep the surrounding components at a safe distance to prevent thermal coupling. A heat sink or a thermal shield can be used for high-power applications.
  • The maximum allowed voltage derating for the SQ2309CES-T1_GE3 is 80% of the maximum rated voltage (30 V) at high temperatures (above 150°C). This derating ensures the device's reliability and prevents premature failure.
  • Yes, the SQ2309CES-T1_GE3 is suitable for high-frequency switching applications up to 1 MHz. However, ensure that the PCB layout is optimized for high-frequency operation, and the device is properly decoupled to minimize parasitic inductance and capacitance.
  • To ensure proper soldering, use a soldering iron with a temperature of 260°C to 280°C. Apply a small amount of solder paste or flux to the pads, and use a soldering technique that minimizes the thermal stress on the device. Avoid using excessive solder or applying too much pressure, which can damage the device.

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SQ2309CES-T1_GE3 Overview

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