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SSM6K211FE,LF - Toshiba

Description: MOSFET Small-Signal MOSFET

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SSM6K211FE,LF - Toshiba - PCB symbol
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PCB Footprints
SSM6K211FE,LF - Toshiba PCB footprint - SO Transistor Flat Lead - SO Transistor Flat Lead - SOT-563
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3D Models
SSM6K211FE,LF - Toshiba - 3D model - SO Transistor Flat Lead - SOT-563
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SSM6K211FE,LF Details

  • Manufacturer Part Number:

    SSM6K211FE,LF

  • Pbfree Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    3.2 A

  • Drain-source On Resistance-Max:

    0.059 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    85 pF

  • JESD-30 Code:

    R-PDSO-F6

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.5 W

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SSM6K211FE,LF Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. The device should be placed near a thermal pad or a heat sink to ensure efficient heat dissipation.
  • Monitor the device's voltage, current, and temperature to ensure they are within the specified limits. Use a thermal monitoring system and overcurrent protection to prevent damage.
  • A gate drive circuit with a high current capability and a fast rise/fall time is recommended. A gate resistor value between 10-20 ohms is suitable for most applications.
  • The internal diode can be used as a freewheeling diode, but it's recommended to use an external diode with a faster recovery time to reduce losses and EMI.
  • The maximum allowed voltage overshoot is 10% above the maximum rated voltage. Exceeding this limit can reduce the device's lifespan or cause failure.

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SSM6K211FE,LF Overview

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