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SSN1N45BTA - onsemi

Description: 100% Avalanche Tested; Low Crss (typical 6.5 pF); Gate-Source Voltage ± 50V Guaranteed; Low Gate Charge (typical 6.5 nC); 0.5A, 450V, RDS(on) = 4.25Ω @ VGS = 10 V; Improved dv/dt Capability

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PCB Footprints
SSN1N45BTA - onsemi PCB footprint - Other - Other - TO−92 3 4.83x4.76 LEADFORMED CASE 135AR ISSUE O-1
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3D Models
SSN1N45BTA - onsemi  - 3D model - Other - TO−92 3 4.83x4.76 LEADFORMED CASE 135AR ISSUE O-1
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SSN1N45BTA Details

  • Manufacturer Part Number:

    SSN1N45BTA

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO−92 3LD 4.75x4.80

  • Package Description:

    TO-923 PIN

  • Manufacturer Package Code:

    135AV

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    450 V

  • Drain Current-Max (ID):

    0.5 A

  • Drain-source On Resistance-Max:

    4.25 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    8.5 pF

  • JEDEC-95 Code:

    TO-92

  • JESD-30 Code:

    O-PBCY-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SSN1N45BTA Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the SSN1N45BTA is -55°C to 150°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and minimizing thermal resistance.
  • The recommended gate drive voltage for the SSN1N45BTA is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • To protect the SSN1N45BTA from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in a static-safe environment.
  • The maximum allowable current for the SSN1N45BTA is 1.5A, with a maximum pulsed current of 3A.

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SSN1N45BTA Overview

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Part Image SSN1N45BTA Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 0.5A I(D), 450V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92