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STGB20H60DF - STMicroelectronics

Description: STMicroelectronics STGB20H60DF, IGBT Transistor, 40 A 600 V, 3-Pin D2PAK

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STGB20H60DF - STMicroelectronics PCB footprint - Other - Other - D2PAK_2022-15
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STGB20H60DF Details

  • Manufacturer Part Number:

    STGB20H60DF

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    40 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    167 W

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    259 ns

  • Turn-on Time-Nom (ton):

    55.9 ns

  • VCEsat-Max:

    2 V

STGB20H60DF Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the STGB20H60DF is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation and to prevent thermal runaway.
  • The thermal resistance (Rth) for the STGB20H60DF can be calculated using the formula: Rth = (Tj - Ta) / Pd, where Tj is the junction temperature, Ta is the ambient temperature, and Pd is the power dissipation. The datasheet provides the thermal resistance values for different packages and mounting conditions.
  • The recommended gate resistor value for the STGB20H60DF depends on the specific application and switching frequency. A typical value is around 10-20 ohms, but it's recommended to consult the datasheet and application notes for more specific guidance.
  • Yes, the STGB20H60DF is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the gate driver is capable of handling the high-frequency switching.
  • To protect the STGB20H60DF from overvoltage and overcurrent, it's recommended to use a voltage regulator or a voltage clamp to limit the voltage, and a current sense resistor or a current limiter to detect and limit the current. Additionally, consider using a fuse or a circuit breaker to protect against overcurrent conditions.

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STGB20H60DF Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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