STGB20H65FB2 footprint, schematic symbol and 3D model by STMicroelectronics

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STGB20H65FB2 - STMicroelectronics PCB footprint - Other - Other - STGB20H65FB2-1

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Datasheet Download Datasheet
Stock & Prices Price & Stock for STGB20H65FB2
Part Number STGB20H65FB2
Manufacturer STMicroelectronics
Pin Count 3
Part Category Transistor IGBT
Package Category Other
Footprint Name Other - STGB20H65FB2-1
Released Date Oct 4, 2022
Last Modified Date Jan 8, 2026 2:31 PM UTC
Pinout / Pin List Click Here (Member Only)

STGB20H65FB2 Details

Manufacturer Part Number:
STGB20H65FB2
Brand Name:
STMicroelectronics
Rohs Code:
Yes
Part Life Cycle Code:
Active
Country Of Origin:
Mainland China
ECCN Code:
EAR99
Factory Lead Time:
15 Weeks
Date Of Intro:
2020-05-25
Manufacturer:
STMicroelectronics
YTEOL:
5.82
Case Connection:
COLLECTOR
Collector Current-Max (IC):
40 A
Collector-Emitter Voltage-Max:
650 V
Configuration:
SINGLE
Gate-Emitter Thr Voltage-Max:
7 V
Gate-Emitter Voltage-Max:
20 V
JEDEC-95 Code:
TO-263AB
JESD-30 Code:
R-PSSO-G2
Number of Elements:
1
Number of Terminals:
2
Operating Temperature-Max:
175 °C
Operating Temperature-Min:
-55 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
147 W
Surface Mount:
YES
Terminal Form:
GULL WING
Terminal Position:
SINGLE
Transistor Application:
POWER CONTROL
Transistor Element Material:
SILICON
Turn-off Time-Nom (toff):
178 ns
Turn-on Time-Nom (ton):
26 ns
VCEsat-Max:
2.1 V

STGB20H65FB2 Frequently Asked Questions (FAQs)

The maximum junction temperature (Tj) for the STGB20H65FB2 is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
To calculate the maximum allowable power dissipation, you need to consider the thermal resistance (Rth) and the maximum junction temperature (Tj). The formula is: Pd(max) = (Tj(max) - Ta) / Rth, where Ta is the ambient temperature. For the STGB20H65FB2, Rth is typically around 1.5°C/W.
The recommended gate drive voltage for the STGB20H65FB2 is between 10V and 15V. However, it's essential to ensure that the gate drive voltage is within the specified range to avoid damage to the device.
Yes, the STGB20H65FB2 is suitable for high-frequency switching applications up to 100 kHz. However, it's crucial to consider the device's switching losses, thermal management, and layout design to ensure reliable operation.
To ensure proper cooling, consider the following: use a heat sink with a thermal interface material, ensure good airflow, and keep the device away from other heat sources. You can also use thermal simulation tools to optimize your design.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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