Part Image

SUD19P06-60-GE3 - Vishay

Description: P-Channel 60 V 18.3A (Tc) 2.3W (Ta), 38.5W (Tc) Surface Mount TO-252AA

Download SUD19P06-60-GE3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
SUD19P06-60-GE3 - Vishay PCB footprint - Other - Other - SUD19P06-60-GE3-1
click to zoom
3D Models
SUD19P06-60-GE3 - Vishay  - 3D model - Other - SUD19P06-60-GE3-1
click to zoom

SUD19P06-60-GE3 Details

  • Manufacturer Part Number:

    SUD19P06-60-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.4

  • Avalanche Energy Rating (Eas):

    24.2 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    18.3 A

  • Drain-source On Resistance-Max:

    0.06 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    38.5 W

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SUD19P06-60-GE3 Frequently Asked Questions (FAQs)

  • The recommended land pattern for SUD19P06-60-GE3 is a rectangular pad with a size of 1.5 mm x 2.5 mm, with a solder mask clearance of 0.2 mm.
  • Yes, SUD19P06-60-GE3 is rated for operation up to 150°C, but it's recommended to derate the power handling at high temperatures to ensure reliability.
  • To ensure reliability in high-humidity environments, it's recommended to use a conformal coating or potting compound to protect the device from moisture, and to follow proper storage and handling procedures.
  • The recommended soldering profile for SUD19P06-60-GE3 is a peak temperature of 260°C for 10-15 seconds, with a ramp-up rate of 3°C/s and a ramp-down rate of 6°C/s.
  • Yes, SUD19P06-60-GE3 is designed to withstand vibrations up to 10 G, but it's recommended to follow proper mounting and securing procedures to ensure reliability.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SUD19P06-60-GE3 Overview

Use the download button to access the SUD19P06-60-GE3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SUD19, or try a keyword search, such as Power Field-Effect Transistors

Parts related to SUD19P06-60-GE3

Showing 0 results

SUD19P06-60-GE3 Alternates

Showing results

Image Part Number Model
Part Image SUD19P06-60-E3 Vishay Siliconix

Power Field-Effect Transistor, 19A I(D), 60V, 0.12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252