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SZESD8551N2T5G - onsemi

Description: Low Capacitance (0.30 pF Max, I/O to GND); Protection for the Following IEC Standards: IEC 61000−4−2 (Level 4) ISO10605 330 pF / 2 k? ±30 kV Contact; Low ESD Clamping Voltage; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant; SZESD8551MXWT5G Wettable Flank Package

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SZESD8551N2T5G - onsemi PCB footprint - Other - Other - ESD8551N2T5G-1
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SZESD8551N2T5G Details

  • Manufacturer Part Number:

    SZESD8551N2T5G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    X2DFN-2

  • Package Description:

    X2DFN-2

  • Manufacturer Package Code:

    714AB

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Factory Lead Time:

    6 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.79

  • Additional Feature:

    LOW CAPACITANCE

  • Breakdown Voltage-Max:

    8.3 V

  • Breakdown Voltage-Min:

    5.5 V

  • Breakdown Voltage-Nom:

    6.9 V

  • Configuration:

    SINGLE, 1 CHANNEL

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • JESD-30 Code:

    R-PBCC-N2

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Peak Reflow Temperature (Cel):

    260

  • Polarity:

    BIDIRECTIONAL

  • Reference Standard:

    AEC-Q101; IEC-61000-4-2

  • Rep Pk Reverse Voltage-Max:

    3.3 V

  • Reverse Current-Max:

    0.5 µA

  • Reverse Test Voltage:

    3.3 V

  • Surface Mount:

    YES

  • Technology:

    AVALANCHE

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

SZESD8551N2T5G Frequently Asked Questions (FAQs)

  • A good PCB layout for the SZESD8551N2T5G should consider the following: keep the input and output traces as short as possible, use a solid ground plane, and place the device close to the power source. Additionally, it's recommended to use a 4-layer PCB with a dedicated power plane and a dedicated ground plane to minimize noise and EMI.
  • To ensure proper biasing, make sure to follow the recommended operating conditions in the datasheet. This includes providing a stable input voltage within the specified range, and ensuring that the input voltage is properly decoupled using capacitors. Additionally, it's recommended to use a voltage regulator to regulate the input voltage and provide a clean power supply to the device.
  • The SZESD8551N2T5G has an operating temperature range of -40°C to 125°C. However, it's recommended to operate the device within a temperature range of 0°C to 85°C for optimal performance and reliability.
  • The SZESD8551N2T5G has built-in ESD protection, but it's still recommended to take additional precautions to prevent ESD damage. This includes using ESD-safe handling and storage procedures, and using ESD protection devices such as TVS diodes or ESD suppressors in the circuit design.
  • The SZESD8551N2T5G should be stored in a dry, cool place away from direct sunlight and moisture. The recommended storage temperature range is -40°C to 125°C, and the recommended storage humidity is 60% RH or less.

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SZESD8551N2T5G Overview

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Part Image ESD8551N2T5G onsemi

Trans Voltage Suppressor Diode, 3.3V V(RWM), Bidirectional, 1 Element, Silicon