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TPS1100DR - Texas Instruments

Description: Single P-channel Enhancement-Mode MOSFET

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TPS1100DR - Texas Instruments - PCB symbol
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TPS1100DR - Texas Instruments PCB footprint - Small Outline Packages - Small Outline Packages - D0008A
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TPS1100DR - Texas Instruments - 3D model - Small Outline Packages - D0008A
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TPS1100DR Details

  • Manufacturer Part Number:

    TPS1100DR

  • Brand Name:

    Texas Instruments

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC

  • Pin Count:

    8

  • Country Of Origin:

    Mexico

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.21.00.95

  • Manufacturer:

    Texas Instruments

  • YTEOL:

    15

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE, ESD PROTECTED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    15 V

  • Drain Current-Max (ID):

    1.6 A

  • Drain-source On Resistance-Max:

    0.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.791 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TPS1100DR Frequently Asked Questions (FAQs)

  • A good PCB layout for the TPS1100DR involves placing the input and output capacitors close to the device, using a solid ground plane, and minimizing the length of the input and output traces. A 4-layer PCB with a dedicated power plane and a solid ground plane is recommended.
  • To ensure stability, it's essential to follow the recommended component values and PCB layout guidelines. Additionally, the output capacitor should be selected based on the specific application requirements, and the input capacitor should be chosen to ensure a stable input voltage.
  • The TPS1100DR can handle input voltages up to 18V, but it's recommended to operate within the specified input voltage range of 2.7V to 15V for optimal performance and reliability.
  • The TPS1100DR is rated for operation up to 125°C, but the device's performance and reliability may degrade at high temperatures. It's essential to consider the thermal design and heat dissipation in the system to ensure reliable operation.
  • The output voltage of the TPS1100DR can be calculated using the formula: VOUT = VREF x (1 + R1/R2), where VREF is the internal reference voltage, and R1 and R2 are the resistors in the feedback network.

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TPS1100DR Overview

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About Texas Instruments

Texas Instruments (TI) designs and manufactures semiconductors and integrated circuits for a wide range of applications. The company's product portfolio includes analog chips, which are essential for managing power and signal functions in electronic devices, and embedded processors, which serve as the brains in various systems, enabling functionality in everything from industrial equipment to consumer electronics. TI's innovations in semiconductor technology have made it a leader in the industry.

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TPS1100DR Alternates

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Part Image TPS1100DRG4 Texas Instruments

Small Signal Field-Effect Transistor, 1.6A I(D), 15V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA