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2N7002AQ-7 - Diodes Incorporated

Description: MOSFET 2N7002 Family

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2N7002AQ-7 - Diodes Incorporated PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - 2N7002AQ-7-AP
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2N7002AQ-7 - Diodes Incorporated  - 3D model - SOT23 (3-Pin) - 2N7002AQ-7-AP
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2N7002AQ-7 Details

  • Manufacturer Part Number:

    2N7002AQ-7

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-23, 3 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    7

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    0.18 A

  • Drain-source On Resistance-Max:

    6 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1.4 pF

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.54 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2N7002AQ-7 Frequently Asked Questions (FAQs)

  • The 2N7002AQ-7 is a low-threshold voltage N-channel MOSFET, and its maximum operating frequency is not explicitly stated in the datasheet. However, based on its characteristics, it is suitable for low-frequency applications up to 100 kHz.
  • To ensure the 2N7002AQ-7 is fully turned on, the gate-source voltage (Vgs) should be at least 4.5V, and the drain-source voltage (Vds) should be within the recommended operating range. Additionally, the gate current should be sufficient to charge the gate capacitance quickly.
  • The maximum power dissipation of the 2N7002AQ-7 is not explicitly stated in the datasheet. However, based on its thermal resistance and package type, the maximum power dissipation can be estimated to be around 1.5W to 2W, depending on the operating conditions.
  • While the 2N7002AQ-7 can be used as a switch, it is not suitable for high-current applications due to its limited current rating (500mA) and power dissipation capabilities. For high-current applications, a more suitable MOSFET with higher current and power ratings should be chosen.
  • To protect the 2N7002AQ-7 from ESD, handle the device by the body or use an anti-static wrist strap or mat. Avoid touching the device's pins or leads, and use ESD-protected packaging and storage materials.

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2N7002AQ-7 Overview

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