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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	70V06L20JGI8 Renesas Electronics	1	The 70V06 is a high-speed 16K x 8 Dual-Port Static RAM designed to be used as a stand-alone 128K-bit Dual-Port SRAM or as a combination MASTER/SLAVE Dual-Port SRAM for 16-bit-or-more word systems which results in full speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode.	Plastic Leaded Chip Carrier	70V06L20JGI8	3D model not available Symbol and footprint available 2	1 Download Model
	70V3569S5BCI8 Renesas Electronics	1	The 70V3569 is a high-speed 16K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3569 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V.	BGA	70V3569S5BCI8	3D model available Symbol and footprint available 3	1 Download Model
	71V3558S133PFG Renesas Electronics	1	The 71V3558 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3558 contains data I/O, address and control signal registers.	Quad Flat Packages	71V3558S133PFG	3D model available Symbol and footprint available 3	1 Download Model
	71V65603S150BQ Renesas Electronics	1	The 71V65603 3.3V CMOS SRAM is organized as 256K X 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V65603 contain data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM.	BGA	71V65603S150BQ	3D model available Symbol and footprint available 3	1 Download Model

	71T75602S150PFG8 Renesas Electronics	1	The 71T75602 2.5V CMOS Synchronous SRAM organized as 512K x 36 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71T75602 contains data I/O, address and control signal registers.	Quad Flat Packages	71T75602S150PFG8	3D model available Symbol and footprint available 3	1 Download Model
	70V3589S133DRG8 Renesas Electronics	1	The 70V3589 is a high-speed 64K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3589 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V.	Quad Flat Packages	70V3589S133DRG8	3D model available Symbol and footprint available 3	1 Download Model
	M48T08-100PC1 STMicroelectronics	1	STMicroelectronics M48T08-100PC1 NVRAM, 64kbit, 100ns 28-Pin PCDIP	Dual-In-Line Packages	M48T08-100PC1	3D model available Symbol and footprint available 3	1 Download Model
	709349L7PFGI8 Renesas Electronics	1	The 709349 is a high-speed 4K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode.	Quad Flat Packages	709349L7PFGI8	3D model available Symbol and footprint available 3	1 Download Model
	71V632S7PFG Renesas Electronics	1	The 71V632 3.3V CMOS SRAM is organized as 64K x 32. The pipelined burst architecture provides cost-effective 3-1-1-1 secondary cache performance for processors up to 117MHz. The 71V632 SRAM contains write, data, address, and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.	Quad Flat Packages	71V632S7PFG	3D model available Symbol and footprint available 3	1 Download Model
	70T3339S133BF Renesas Electronics	1	The 70T3339 is a high-speed 512K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3339 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V.	BGA	70T3339S133BF	3D model available Symbol and footprint available 3	1 Download Model
	RMQS2A1818DGBA-332#AC0 Renesas Electronics	1	The RMQS2A1836DGBA is a 524, 288-word by 36-bit and the RMQS2A1818DGBA is a 1, 048, 576-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed	BGA	RMQS2A1818DGBA-332#AC0	3D model available Symbol and footprint available 3	1 Download Model
	71024S12TYG8 Renesas Electronics	1	The 71024 5V CMOS SRAM is organized as 128K x 8. All bidirectional inputs and outputs of the 71024 are TTL-compatible, and operation is from a single 5V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.	Other	71024S12TYG8	3D model available Symbol and footprint available 3	1 Download Model
	71V2546S150BG8 Renesas Electronics	1	The 71V2546 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V2546 has an on-chip burst counter. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM.	BGA	71V2546S150BG8	3D model available Symbol and footprint available 3	1 Download Model
	7142LA35C Renesas Electronics	1	The 7142 is a high-speed 2K x 8 Dual-Port Static RAM designed to be used as a "SLAVE" Dual-Port RAM together with the 7132 "MASTER" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 QML is available.	Ceramic Dual-In-Line Packages	7142LA35C	3D model not available Symbol and footprint available 2	1 Download Model
	70T3599S200BC8 Renesas Electronics	1	The 70T3599 is a high-speed 128K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3599 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V.	BGA	70T3599S200BC8	3D model available Symbol and footprint available 3	1 Download Model

	70V37L20PFGI8 Renesas Electronics	1	The 70V37 is a high-speed 32K x 18 Dual-Port Static RAM designed to be used as a stand-alone 576K-bit Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 36-bit or more word systems. This MASTER/SLAVE approach in 36-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by Chip Enable (CE) permits the on-chip circuitry of each port to enter a very low standby power mode.	Quad Flat Packages	70V37L20PFGI8	3D model available Symbol and footprint available 3	1 Download Model
	5962-8687503XA Renesas Electronics	1	The 5962-86875 (IDT 7130/40) is a high-speed 1K x 8 Dual-Port Static RAM designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with a "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with	Ceramic Dual-In-Line Packages	5962-8687503XA	3D model not available Symbol and footprint available 2	1 Download Model
	70V657S12BF Renesas Electronics	1	The 70V657 is a high-speed 32K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 72-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each por	BGA	70V657S12BF	3D model available Symbol and footprint available 3	1 Download Model
	70V3569S5BC8 Renesas Electronics	1	The 70V3569 is a high-speed 16K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3569 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V.	BGA	70V3569S5BC8	3D model available Symbol and footprint available 3	1 Download Model
	70V658S10BF8 Renesas Electronics	1	The 70V658 is a high-speed 64K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 72-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each por	BGA	70V658S10BF8	3D model available Symbol and footprint available 3	1 Download Model
	7026S35G Renesas Electronics	1	The 7026 is a high-speed 16K x 16 Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 32-bit-or-more word systems. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 QML is available.	Other	7026S35G	3D model available Symbol and footprint available 3	1 Download Model
	71321SA35TFG8 Renesas Electronics	1	The 71321 is a high-speed 2K x 8 Dual-Port Static RAM with internal interrupt logic for interprocessor communications. It is designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 71421 "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low sta	Quad Flat Packages	71321SA35TFG8	3D model available Symbol and footprint available 3	1 Download Model
	7005L25G Renesas Electronics	1	The 7005 is a high-speed 8K x 8 Dual-Port Static RAM designed to be used as a stand-alone 64K-bit Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 16-bit-or-more word systems. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 QML is available.	Other	7005L25G	3D model available Symbol and footprint available 3	1 Download Model
	RMQC4A3618DGBA-302#AC0 Renesas Electronics	1	The RMQC4A3636DGBA is a 1, 048, 576-word by 36-bit and the RMQC4A3618DGBA is a 2, 097, 152-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Sp	BGA	RMQC4A3618DGBA-302#AC0	3D model available Symbol and footprint available 3	1 Download Model
	HM1-65642-9 Renesas Electronics	1	The HM-65642 is a CMOS 8192 x 8-bit Static Random Access Memory. The pinout is the JEDEC 28 pin, 8-bit wide standard, which allows easy memory board layouts which accommodate a variety of industry standard ROM, PROM, EPROM, EEPROM and RAMs. The HM-65642 is ideally suited for use in microprocessor based systems. In particular, interfacing with the Intersil 80C86 and 80C88 microprocessors is simplified by the convenient output enable (G) input. The HM-65642 is a full CMOS RAM which utilizes an array of six tr	Ceramic Dual-In-Line Packages	HM1-65642-9	3D model not available Symbol and footprint available 2	1 Download Model
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