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R1RP0416DSB-2LR#D1
Renesas Electronics
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1 | The R1RP0416D Series is a 4-Mbit High-Speed static RAM organized 256-k word × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII. | Small Outline Packages | R1RP0416DSB-2LR#D1 |
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R1RP0416DSB-0PI#D1
Renesas Electronics
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0 | The R1RP0416DI Series is a 4-Mbit High-Speed static RAM organized 256-k word × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII. | Small Outline Packages | R1RP0416DSB-0PI#D1 |
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R1RP0408DGE-2LR#B1
Renesas Electronics
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1 | SRAM Memory IC 4Mbit Parallel 12 ns 36-SOJ |0°C ~ 70°C (TA) | Other | R1RP0408DGE-2LR#B1 |
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R1RW0416DSB-2SR#D1
Renesas Electronics
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0 | The R1RW0416D is a 4-Mbit High-Speed static RAM organized 256-kword × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. Especially, LVersion and S-Version are low power consumption and it is the best for the battery backup system. The package prepare | Small Outline Packages | R1RW0416DSB-2SR#D1 |
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HPCR0402-R-1R20FT
Venkel
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1 | High Power CR,0402,1/8W,1.2R,±1% | Resistor Chip | HPCR0402-R-1R20FT |
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R1RW0416DSB-2PI#D0
Renesas Electronics
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1 | The R1RW0416DI is a 4-Mbit High-Speed static RAM organized 256-kword × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0416DI is packaged in 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high density surface mounting. | Small Outline Packages | R1RW0416DSB-2PI#D0 |
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HPCR0402-R-1R74FT
Venkel
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1 | High Power CR,0402,1/8W,1.74R,±1% | Resistor Chip | HPCR0402-R-1R74FT |
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CRG0805-R-1R47FT
Venkel
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1 | RoHS 6/6 Green CR,0805,1/8W,1.47R,±1% | Other | CRG0805-R-1R47FT |
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1 | Inductors for decoupling circuits, Soft termination, KLZ-HR series (for automotive) | Inductors Chip | KLZ1608AHR1R0WTD25 |
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IHLE2020CDER1R5M51
Vishay
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1 | IHLE? High Current Inductor With E-Field Shield 1.5 µH 7.9 A 19.8mOhm Max | Other | IHLE2020CDER1R5M51 |
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IHLP3232CZER1R5M01
Vishay
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1 | • Shielded construction• Excellent DC/DC energy storage up to 5 MHz.Filter inductor applications up to SRF (see“Standard Electrical Specifications” table)• Operating temperature up to 125 °C• Lowest DCR/μH, in this package size• Handles high transient current spikes withoutsaturatio | Inductors Precision Moulded | IHLP3232CZER1R5M01 |
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CRG0805-R-1R37FT
Venkel
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1 | RoHS 6/6 Green CR,0805,1/8W,1.37R,±1% | Other | CRG0805-R-1R37FT |
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IHLP2525CZER1R0M06
Vishay
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1 | Inductor Power Shielded Wirewound 1uH 20% 100KHz Powdered Iron 11A 0.00884Ohm DCR 2525 T/R | Inductors Precision Moulded | IHLP2525CZER1R0M06 |
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HPCR0402-R-1R33FT
Venkel
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1 | High Power CR,0402,1/8W,1.33R,±1% | Resistor Chip | HPCR0402-R-1R33FT |
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HPCR0402-R-1R37FT
Venkel
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1 | High Power CR,0402,1/8W,1.37R,±1% | Resistor Chip | HPCR0402-R-1R37FT |
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R1RP0416DSB-2LR#D0
Renesas Electronics
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1 | The R1RP0416D Series is a 4-Mbit High-Speed static RAM organized 256-k word × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII. | Small Outline Packages | R1RP0416DSB-2LR#D0 |
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LTM8031EV#PBF
Analog Devices
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1 | Switching Voltage Regulators Ultralow N EMC 36V, 1A DC/DC Module R | Other | LTM8031EV#PBF |
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39512-1005
Molex
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1 | Pluggable Terminal Blocks 3.81MM EURO HEADER R O HEADER RA BLK 5CKT | Other | 39512-1005 |
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RC422-200-221-4100
Molex
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1 | Rectangular MIL Spec Connectors CONNECTOR, R SERIES Current Rating:t3 A Insulation Resistance:5 GOhms,Voltage Rating:t250 V | Other | RC422-200-221-4100 |
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TLC2272AMDRG4
Texas Instruments
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1 | Advanced LinCMOS™ rail-to-rail dual precision operational amplifier with wide temperature r | Small Outline Packages | TLC2272AMDRG4 |
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TLE9371SJXTMA1
Infineon
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1 | To meet the world-wide customer requirements for environmentally friendly products and to be compliantwith government r | Small Outline Packages | TLE9371SJXTMA1 |
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87920-9112
Molex
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1 | Headers & Wire Housings MGrid Hdr DRSW SMT W/Cap T& R 6Ckt | Header, Unshrouded - Straight SMD Pin | 87920-9112 |
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KPHBM-2012PBASURKC
Kingbright
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1 | LED, Blue, Red, SMD, 1.25mm x 1.3mm, 120 °, Rectangular, R 30mA, B 30mA | Other | KPHBM-2012PBASURKC |
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JE2835AWT-R-U50GA0000-N0000001
CREE LED
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1 | Mid-Power LEDs - White White 5000 K 90-CRI, 2835 Size, R Class | Other | JE2835AWT-R-U50GA0000-N0000001 |
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70541-0007
Molex
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1 | Headers & Wire Housings SL Vrt Latch Hdr /Sp r /Split Pg Tin 8Ckt | Other | 70541-0007 |
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