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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	IHLP2020CZER1R5M51 Vishay	1	IHLP® Automotive Inductors, High Temperature (180 °C) Series	Inductors Precision Moulded	IHLP2020CZER1R5M51	3D model available Symbol and footprint available 3	1 Download Model
	IHLP3232CZER1R5M01 Vishay	1	• Shielded construction• Excellent DC/DC energy storage up to 5 MHz.Filter inductor applications up to SRF (see“Standard Electrical Specifications” table)• Operating temperature up to 125 °C• Lowest DCR/μH, in this package size• Handles high transient current spikes withoutsaturatio	Inductors Precision Moulded	IHLP3232CZER1R5M01	3D model available Symbol and footprint available 3	1 Download Model
	HPCR0402-R-1R20FT Venkel	1	High Power CR,0402,1/8W,1.2R,±1%	Resistor Chip	HPCR0402-R-1R20FT	3D model available Symbol and footprint available 3	1 Download Model
	R1RW0416DGE-2PI#B1 Renesas Electronics	1	The R1RW0416DI is a 4-Mbit High-Speed static RAM organized 256-kword × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0416DI is packaged in 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high density surface mounting.	Other	R1RW0416DGE-2PI#B1	3D model available Symbol and footprint available 3	1 Download Model

	R1RP0416DSB-2LR#D1 Renesas Electronics	1	The R1RP0416D Series is a 4-Mbit High-Speed static RAM organized 256-k word × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.	Small Outline Packages	R1RP0416DSB-2LR#D1	3D model available Symbol and footprint available 3	1 Download Model
	R1RW0416DSB-2SR#D1 Renesas Electronics	0	The R1RW0416D is a 4-Mbit High-Speed static RAM organized 256-kword × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. Especially, LVersion and S-Version are low power consumption and it is the best for the battery backup system. The package prepare	Small Outline Packages	R1RW0416DSB-2SR#D1	3D model available Symbol and footprint available 3	1 Download Model
	FP1107R1-R15-R Eaton	1	150 nH Unshielded Drum Core, Wirewound Inductor 55 A 0.29mOhm Nonstandard	Other	FP1107R1-R15-R	3D model available Symbol and footprint available 3	1 Download Model
	R1RP0416DSB-2PI#D0 Renesas Electronics	1	The R1RP0416DI Series is a 4-Mbit High-Speed static RAM organized 256-k word × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.	Small Outline Packages	R1RP0416DSB-2PI#D0	3D model available Symbol and footprint available 3	1 Download Model
	R1RW0408DGE-2PI#B1 Renesas Electronics	1	The R1RW0408DI is a 4-Mbit High-Speed static RAM organized 512-kword × 8-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0408DI is packaged in 400-mil 36-pin SOJ for high density surface mounting.	Other	R1RW0408DGE-2PI#B1	3D model available Symbol and footprint available 3	1 Download Model
	CRG0805-R-1R13FT Venkel	1	RoHS 6/6 Green CR,0805,1/8W,1.13R,±1%	Other	CRG0805-R-1R13FT	3D model available Symbol and footprint available 3	1 Download Model
	HPCR0402-R-1R58FT Venkel	1	High Power CR,0402,1/8W,1.58R,±1%	Resistor Chip	HPCR0402-R-1R58FT	3D model available Symbol and footprint available 3	1 Download Model
	R1RW0416DSB-2PI#D0 Renesas Electronics	1	The R1RW0416DI is a 4-Mbit High-Speed static RAM organized 256-kword × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0416DI is packaged in 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high density surface mounting.	Small Outline Packages	R1RW0416DSB-2PI#D0	3D model available Symbol and footprint available 3	1 Download Model
	CRG0805-R-1R15FT Venkel	1	RoHS 6/6 Green CR,0805,1/8W,1.15R,±1%	Other	CRG0805-R-1R15FT	3D model available Symbol and footprint available 3	1 Download Model
	HPCR0402-R-1R60FT Venkel	1	High Power CR,0402,1/8W,1.6R,±1%	Resistor Chip	HPCR0402-R-1R60FT	3D model available Symbol and footprint available 3	1 Download Model
	HPCR0402-R-1R33FT Venkel	1	High Power CR,0402,1/8W,1.33R,±1%	Resistor Chip	HPCR0402-R-1R33FT	3D model available Symbol and footprint available 3	1 Download Model

	HPCR0402-R-1R37FT Venkel	1	High Power CR,0402,1/8W,1.37R,±1%	Resistor Chip	HPCR0402-R-1R37FT	3D model available Symbol and footprint available 3	1 Download Model
	IHLP2525CZER1R0M06 Vishay	1	Inductor Power Shielded Wirewound 1uH 20% 100KHz Powdered Iron 11A 0.00884Ohm DCR 2525 T/R	Inductors Precision Moulded	IHLP2525CZER1R0M06	3D model available Symbol and footprint available 3	1 Download Model
	CRG0805-R-1R37FT Venkel	1	RoHS 6/6 Green CR,0805,1/8W,1.37R,±1%	Other	CRG0805-R-1R37FT	3D model available Symbol and footprint available 3	1 Download Model
	HPCR0402-R-1R02FT Venkel	1	High Power CR,0402,1/8W,1.02R,±1%	Resistor Chip	HPCR0402-R-1R02FT	3D model available Symbol and footprint available 3	1 Download Model
	IHLE2020CDER1R5M51 Vishay	1	IHLE? High Current Inductor With E-Field Shield 1.5 µH 7.9 A 19.8mOhm Max	Other	IHLE2020CDER1R5M51	3D model available Symbol and footprint available 3	1 Download Model
	TLC2272AMDRG4 Texas Instruments	1	Advanced LinCMOS™ rail-to-rail dual precision operational amplifier with wide temperature r	Small Outline Packages	TLC2272AMDRG4	3D model available Symbol and footprint available 3	1 Download Model
	JE2835AWT-R-U50GA0000-N0000001 CREE LED	1	Mid-Power LEDs - White White 5000 K 90-CRI, 2835 Size, R Class	Other	JE2835AWT-R-U50GA0000-N0000001	3D model available Symbol and footprint available 3	1 Download Model
	39512-1005 Molex	1	Pluggable Terminal Blocks 3.81MM EURO HEADER R O HEADER RA BLK 5CKT	Other	39512-1005	3D model available Symbol and footprint available 3	1 Download Model
	RC422-200-221-4100 Molex	1	Rectangular MIL Spec Connectors CONNECTOR, R SERIES Current Rating:t3 A Insulation Resistance:5 GOhms,Voltage Rating:t250 V	Other	RC422-200-221-4100	3D model available Symbol and footprint available 3	1 Download Model
	AWRL1432BBAAMFRQ1 Texas Instruments	1	RF Transceiver Single-chip low-powe r 76GHz to 81GHz au , -40°C ~ 125°C	BGA	AWRL1432BBAAMFRQ1	3D model available Symbol and footprint available 3	1 Download Model
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