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CY7C1041GN30-10BVJXIT
Infineon
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1 | SRAM ASYNC SRAMS | BGA | CY7C1041GN30-10BVJXIT |
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CY7C109D-10ZXIT
Infineon
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1 | SRAM 1Mb 10ns 128K x 8 Fast Async SRAM | Small Outline Packages | CY7C109D-10ZXIT |
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IDT70V25L25PFGI
Renesas Electronics
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1 | IDT IDT70V25L25PFGI SRAM Memory, 128kbit, 3 → 3.6 V, 25ns 100-Pin TQFP | Quad Flat Packages | IDT70V25L25PFGI |
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IDT7025L20PFGI
Renesas Electronics
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1 | IDT SRAM Memory, IDT7025L20PFGI- 128kbit | Quad Flat Packages | IDT7025L20PFGI |
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CY7C1470BV25-200AXC
Infineon
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1 | SRAM 72Mb 2.5V 200Mhz 2Mx36 Pipelined SRAM | Quad Flat Packages | CY7C1470BV25-200AXC |
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CY7C1643KV18-450BZI
Infineon
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1 | SRAM Chip Sync Dual 1.8V 144M-bit 8M x 18 0.45ns 165-Pin FBGA Tray | BGA | CY7C1643KV18-450BZI |
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CY14V101PS-SF108XI
Infineon
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1 | CYPRESS SEMICONDUCTOR - CY14V101PS-SF108XI - NV SRAM, 1MBIT, SOIC-16 | Small Outline Packages | CY14V101PS-SF108XI |
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GS88236CB-333I
GSI TECHNOLOGY
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1 | SRAM 2.5 or 3.3V 256K x 32 8M | BGA | GS88236CB-333I |
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IS66WVE2M16DBLL-70BLI-TR
Integrated Silicon Solution Inc.
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1 | IC PSRAM 32M PARALLEL 48TFBGA 3.0V Core Async/Page PSRAM | BGA | IS66WVE2M16DBLL-70BLI-TR |
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IS64WV51216EEBLL-10B2LA3
Integrated Silicon Solution Inc.
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1 | SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4v-3.6v,48 Ball mBGA (6x8 mm), ERR1/2 Pins, RoHS, Automotive temp | BGA | IS64WV51216EEBLL-10B2LA3 |
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DS1220AD-200IND+
Analog Devices
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1 | MAXIM INTEGRATED PRODUCTS - DS1220AD-200IND+ - NVRAM, SRAM, 16 Kbit, 2K x 8bit, 200 ns, EDIP | Dual-In-Line Sockets | DS1220AD-200IND+ |
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CY7C1470BV25-250AXI
Infineon
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1 | SRAM 72Mb 2.5V 250Mhz 2Mx36 Pipelined SRAM | Quad Flat Packages | CY7C1470BV25-250AXI |
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AS6C6264-55STCN
Alliance Memory
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1 | SRAM 64K, 2.7-5.5V, 55ns 8K x 8 Asynch SRAM | Small Outline Packages | AS6C6264-55STCN |
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HM628512CLP-5
HITACHI
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1 | 4 M SRAM (512-kword × 8-bit) | Dual-In-Line Packages | HM628512CLP-5 |
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71V25761S166PFGI
Renesas Electronics
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1 | SRAM 128Kx36 SYNC 3.3V PIPELINED BURST SRAM | Quad Flat Packages | 71V25761S166PFGI |
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6116SA90DB
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Dual-In-Line Packages | 6116SA90DB |
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R1WV6416RSD-5SI#B0
Renesas Electronics
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1 | Support is limited to customers who have already adopted these products.Renesas is the worldwide #1 Low Power SRAM supplier with a full lineup and well balanced long term support. High density and high performance RAMs using Renesas's original technology, for example the Advanced LPSRAM new memory cell concept are offered. | Small Outline Packages | R1WV6416RSD-5SI#B0 |
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R1WV6416RSA-5SR#B0
Renesas Electronics
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1 | Support is limited to customers who have already adopted these products.Renesas is the worldwide #1 Low Power SRAM supplier with a full lineup and well balanced long term support. High density and high performance RAMs using Renesas's original technology, for example the Advanced LPSRAM new memory cell concept are offered. | Small Outline Packages | R1WV6416RSA-5SR#B0 |
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7130SA100C
Renesas Electronics
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1 | The 7130 is a high-speed 1K x 8 Dual-Port Static RAM designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 7140 "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 | Ceramic Dual-In-Line Packages | 7130SA100C |
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71V67903S85PFG
Renesas Electronics
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1 | The 71V67903 3.3V CMOS SRAM is organized as 512K x 18. The 71V67903 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM. | Quad Flat Packages | 71V67903S85PFG |
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7024S70GB
Renesas Electronics
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1 | The 7024 is a high-speed 4Kx 16 Dual-Port Static RAM designed to be used as a stand-alone 64K-bit Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 32-bit or more word systems. An automatic power down feature controlled by Chip Enable (CE) permits the on-chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 QML is available. | Other | 7024S70GB |
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71V016SA10YG8
Renesas Electronics
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1 | The 71V016 3.3V CMOS SRAM is organized as 64K x 16. All bidirectional inputs and outputs of the 71V016 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. | Other | 71V016SA10YG8 |
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71V3577S80BQI8
Renesas Electronics
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1 | The 71V3577 3.3V CMOS SRAM is organized as 128K x 36. The 71V3577 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V3577S80BQI8 |
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70V659S12BFI8
Renesas Electronics
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1 | The 70V659 is a high-speed 128K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 72-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each po | BGA | 70V659S12BFI8 |
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71016S15YGI8
Renesas Electronics
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1 | The 71016 5V CMOS SRAM is organized as 64K x 16. All bidirectional inputs and outputs of the 71016 are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. | Other | 71016S15YGI8 |
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