175-R Model Download Search Results
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UF4C120070K3S
onsemi
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1 | On-resistance RDS(on); Maximum operating temperature: 175 ?C; Excellent Reverse Recover; Low Gate Charge | Transistor Outline, Vertical | UF4C120070K3S |
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STTH1003SG-TR
STMicroelectronics
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1 | High efficiency rectifier ,IF(AV) 10 A ,VRRM 300 V ,Tj (max) 175 °C | Other | STTH1003SG-TR |
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TH4D475K050V0900
Vishay
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1 | Solid Tantalum Surface Mount Chip Capacitors TANTAMOUNT(TM) Molded Case, HI-TMP® High Temperature 175 °C, Automotive Grade | Capacitor Moulded Polarised | TH4D475K050V0900 |
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UJ4C075023K3S
onsemi
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1 | Maximum operating temperature: 175 ?C; Excellent Reverse Recover; Low Gate Charge; On-resistance RDS(on) | Transistor Outline, Vertical | UJ4C075023K3S |
3
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TH4C476K6R3C0800
Vishay
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1 | Solid Tantalum Surface Mount Chip Capacitors TANTAMOUNT(TM) Molded Case, HI-TMP® High Temperature 175 °C, Automotive Grade | Capacitor Moulded Polarised | TH4C476K6R3C0800 |
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UF3C065040T3S
onsemi
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1 | On-resistance RDS(on); Maximum operating temperature: 175 ?C; Excellent Reverse Recover; Low Gate Charge | Transistor Outline, Vertical | UF3C065040T3S |
3
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PNU65005EHJ
Nexperia
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1 | 650 V, 5 A ultrafast recovery rectifier 0.7 50 µA,,1.6 W,75 A,-65 175 °C | Other | PNU65005EHJ |
2
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UJ4C075060L8S
onsemi
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1 | On-resistance RDS(on); Maximum operating temperature: 175 ?C; Excellent Reverse Recover; Low Gate Charge | Other | UJ4C075060L8S |
3
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TH4D476K016C0400
Vishay
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1 | Solid Tantalum Surface Mount Chip Capacitors TANTAMOUNT(TM) Molded Case, HI-TMP® High Temperature 175 °C, Automotive Grade | Capacitor Moulded Polarised | TH4D476K016C0400 |
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PNE40008EHJ
Nexperia
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1 | 400 V, 8 A hyperfast recovery rectifier,1.5 25 µA,3.2 W,-55 175 °C | Other | PNE40008EHJ |
2
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TH4D226K035V0500
Vishay
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1 | Solid Tantalum Surface Mount Chip Capacitors TANTAMOUNT(TM) Molded Case, HI-TMP® High Temperature 175 °C, Automotive Grade | Capacitor Moulded Polarised | TH4D226K035V0500 |
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TH4D476M016D0400
Vishay
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1 | Solid Tantalum Surface Mount Chip Capacitors TANTAMOUNT(TM) Molded Case, HI-TMP® High Temperature 175 °C, Automotive Grade | Capacitor Moulded Polarised | TH4D476M016D0400 |
3
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UF3C065040K3S
onsemi
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1 | On-resistance RDS(on); Maximum operating temperature: 175 ?C; Excellent Reverse Recover; Low Gate Charge | Transistor Outline, Vertical | UF3C065040K3S |
3
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UF3C065080T3S
onsemi
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1 | On-resistance RDS(on); Maximum operating temperature: 175 ?C; Excellent Reverse Recover; Low Gate Charge | Transistor Outline, Vertical | UF3C065080T3S |
3
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TH4D226K035C0500
Vishay
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1 | Solid Tantalum Surface Mount Chip Capacitors TANTAMOUNT(TM) Molded Case, HI-TMP® High Temperature 175 °C, Automotive Grade | Capacitor Moulded Polarised | TH4D226K035C0500 |
3
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STPS10H100SFY
STMicroelectronics
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1 | Automotive 100 V, 10 A High Tj Power Schottky Rectifier,Tj(max.): 175 °C,VF (typ.):0.615 V. | Other | STPS10H100SFY |
3
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SICB5065XG5M-TP
MCC
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1 | 50Amp Silicon Carbide Schottky Diode 650 Volts Storage Temperature Range -55 - 175 °C | Other | SICB5065XG5M-TP |
2
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09794966801
HARTING
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1 | DIN R (HE11) female angled, 96pin, w/ board locks, PL2 | Other | 09794966801 |
3
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5530112F
Dialight
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1 | 553 Series CBI 3mm 2hx1w R,G Cath R | Other | 5530112F |
3
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551-0407F
Dialight
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1 | 551 Series CBI 3mm 1x1 .200 ctrline, R | Other | 551-0407F |
3
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553-0212F
Dialight
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1 | 553 Series CBI 3mm 2hx1w R,G 2mA, Cath R | Other | 553-0212F |
3
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09732646801
HARTING
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1 | DIN R female angled, 64pin, PL2 (rows a,c loaded) | Other | 09732646801 |
3
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TAJR475K002RNJ
Kyocera AVX
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1 | AVX - TAJR475K002RNJ - CAP, TANT, 4.7UF, 2.5V, CASE R | Capacitor Moulded Polarised | TAJR475K002RNJ |
3
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P6KE12CA
STMicroelectronics
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1 | • Peak pulse power:– 600 W (10/1000 μs)– up to 4 kW (8/20 μs)• Stand-off voltage range from 5.8 V to 376 V• Unidirectional and bidirectional types• Operating Tj max: 175 °C• High power capability at Tj max.: up to 420 W (10/1000 µs)• Lead finishing: matte tin plating | Diodes, Axial Diameter Horizontal Mounting | P6KE12CA |
3
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ADL7078ACPZN
Analog Devices
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1 | ► High RF input power survivability: 32 dBm► Integrated AC coupling capacitors and bias inductor► Single positive supply: 5 V with IDQ = 175 mA► RBIAS drain current adjustment pin► Gain: 13 dB typical from 2 GHz to 18 GHz► OIP3: 28 dBm typical from 2 GHz to 18 GHz► OIP2: 48 dBm typical from 2 GHz to 18 GHz | Quad Flat No-Lead | ADL7078ACPZN |
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