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SA15-11SRWA
Kingbright
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1 | KINGBRIGHT - SA15-11SRWA - LED DISPLAY, 1.5", RED, CA | Dual-In-Line Sockets | SA15-11SRWA |
3
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SA15CA
LITTELFUSE
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1 | ESD Suppressors / TVS Diodes SA15CA Bi-Directional | Diodes, Axial Diameter Horizontal Mounting | SA15CA |
3
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SA1510
Silan
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1 | DC MOTOR DRIVER | Dual-In-Line Packages | SA1510 |
3
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2SA1588-GR,LF
Toshiba
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1 | Bipolar (BJT) Transistor PNP 30 V 500 mA 200MHz 100 mW Surface Mount SC-70 | Other | 2SA1588-GR,LF |
3
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71256SA15YGI8
Renesas Electronics
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1 | The 71256SA 5V CMOS SRAM is organized as 32K x 8. All bidirectional inputs and outputs of the 71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. | Other | 71256SA15YGI8 |
3
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2SA1576A-Q-TP
MCC
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1 | Small Signal Bipolar Transistors | SOT23 (3-Pin) | 2SA1576A-Q-TP |
3
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71256SA15PZG8
Renesas Electronics
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1 | The 71256SA 5V CMOS SRAM is organized as 32K x 8. All bidirectional inputs and outputs of the 71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. | Other | 71256SA15PZG8 |
3
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SA15CA-TP
MCC
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1 | 500WATTS TVS 5.0 to 170 VOLTS | Diodes, Axial Diameter Horizontal Mounting | SA15CA-TP |
3
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SA150CA-BP
MCC
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1 | 243V Clamp 2.1A Ipp Tvs Diode Through Hole DO-15 | Diodes, Axial Diameter Horizontal Mounting | SA150CA-BP |
3
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71V016SA15PHGI8
Renesas Electronics
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1 | The 71V016 3.3V CMOS SRAM is organized as 64K x 16. All bidirectional inputs and outputs of the 71V016 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. | Small Outline Packages | 71V016SA15PHGI8 |
3
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71256SA15PZG
Renesas Electronics
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1 | The 71256SA 5V CMOS SRAM is organized as 32K x 8. All bidirectional inputs and outputs of the 71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. | Other | 71256SA15PZG |
3
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71256SA15TPGI
Renesas Electronics
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1 | The 71256SA 5V CMOS SRAM is organized as 32K x 8. All bidirectional inputs and outputs of the 71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. | Dual-In-Line Packages | 71256SA15TPGI |
3
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2SA1576A-R-TP
MCC
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1 | Bipolar (BJT) Transistor PNP 50 V 150 mA 100MHz 200 mW Surface Mount SOT-323 | SOT23 (3-Pin) | 2SA1576A-R-TP |
3
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VFS5045SA151
TDK
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1 | Noise suppression filter, For home appliances (conductive noise countermeasure) | Other | VFS5045SA151 |
3
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6116SA15TPG
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Dual-In-Line Packages | 6116SA15TPG |
3
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71V124SA15YG8
Renesas Electronics
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1 | The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. | Small Outline Packages | 71V124SA15YG8 |
3
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71V256SA15YGI
Renesas Electronics
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1 | The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode (CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. | Other | 71V256SA15YGI |
3
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SA150CA-AP
MCC
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1 | 243V Clamp 2.1A Ipp Tvs Diode Through Hole DO-15 | Diodes, Axial Diameter Horizontal Mounting | SA150CA-AP |
3
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71V256SA15PZGI
Renesas Electronics
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1 | The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode (CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. | Other | 71V256SA15PZGI |
3
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SA15CA-AP
MCC
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1 | 24.4V Clamp 20.9A Ipp Tvs Diode Through Hole DO-15 | Diodes, Axial Diameter Horizontal Mounting | SA15CA-AP |
3
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71V016SA15YGI
Renesas Electronics
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1 | The 71V016 3.3V CMOS SRAM is organized as 64K x 16. All bidirectional inputs and outputs of the 71V016 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. | Other | 71V016SA15YGI |
3
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71V256SA15YGI8
Renesas Electronics
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1 | The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode (CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. | Other | 71V256SA15YGI8 |
3
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ADCR-S02R7SA156MB
ABRACON
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1 | CAP 15F 2.7V TH | Capacitor, Polarized Radial Diameter | ADCR-S02R7SA156MB |
3
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2SA1514KT146S
ROHM Semiconductor
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1 | Bipolar Transistors - BJT PNP 120V 50MA | Other | 2SA1514KT146S |
3
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DE21XSA150KA2BT01F
Murata Electronics
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1 | Capacitor 15pF ±10% DE2 D=6mm T=5mm F=5mm d=0.6mm | Other | DE21XSA150KA2BT01F |
3
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