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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	RMLV1616AGBG-5U2#KC0 Renesas Electronics	1	The RMLV1616A-U Series is a family of 16-Mbit asynchronous SRAMs organized 1,048,576-word × 16-bit.The RMLV1616A-U Series has realized higher soft error immunity compared to typical SRAMs with on-chip ECC, archived by Renesas’s unique Advanced LPSRAM technologies. Therefore, it is suitable for battery backup systems.It is offered in 48pin TSOP (I) or 48-ball fine pitch ball grid array.	BGA	RMLV1616AGBG-5U2#KC0	3D model available Symbol and footprint available 3	1 Download Model
	71V3576S150PFGI Renesas Electronics	1	The 71V3576 3.3V CMOS SRAM is organized as 128K x 36. The 71V3576 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.	Quad Flat Packages	71V3576S150PFGI	3D model available Symbol and footprint available 3	1 Download Model
	7164L25TDB Renesas Electronics	1	The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL-compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.	Ceramic Dual-In-Line Packages	7164L25TDB	3D model not available Symbol and footprint available 2	1 Download Model
	5962-3829406MXA Renesas Electronics	1	The 5962-38294 (7164 SRAM) is organized as 8K x 8 and offers a reduced power standby mode. The low-power version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs are TTL-compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation.	Ceramic Dual-In-Line Packages	5962-3829406MXA	3D model not available Symbol and footprint available 2	1 Download Model

	RMLV1616AGSA-4U2#KA0 Renesas Electronics	1	The RMLV1616A-U Series is a family of 16-Mbit asynchronous SRAMs organized 1,048,576-word × 16-bit.The RMLV1616A-U Series has realized higher soft error immunity compared to typical SRAMs with on-chip ECC, archived by Renesas’s unique Advanced LPSRAM technologies. Therefore, it is suitable for battery backup systems.It is offered in 48pin TSOP (I) or 48-ball fine pitch ball grid array.	Small Outline Packages	RMLV1616AGSA-4U2#KA0	3D model available Symbol and footprint available 3	1 Download Model
	R1LV1616RSD-7SR#B0 Renesas Electronics	1	Support is limited to customers who have already adopted these products.Renesas is the worldwide #1 Low Power SRAM supplier with a full lineup and well balanced long term support. High density and high performance RAMs using Renesas's original technology, for example the Advanced LPSRAM new memory cell concept are offered.	Small Outline Packages	R1LV1616RSD-7SR#B0	3D model available Symbol and footprint available 3	1 Download Model
	7164L25DB Renesas Electronics	1	The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL-compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.	Ceramic Dual-In-Line Packages	7164L25DB	3D model not available Symbol and footprint available 2	1 Download Model
	71V3556SA166BQGI Renesas Electronics	1	The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers.	BGA	71V3556SA166BQGI	3D model available Symbol and footprint available 3	1 Download Model
	71V65603S133PFG8 Renesas Electronics	1	The 71V65603 3.3V CMOS SRAM is organized as 256K X 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V65603 contain data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM.	Quad Flat Packages	71V65603S133PFG8	3D model available Symbol and footprint available 3	1 Download Model
	R1LP0408DSP-5SI#B1 Renesas Electronics	1	The R1LP0408D Series is a family of 4-Mbit static RAMs organized 512-kword × 8-bit, fabricated by Renesas’s high-performance CMOS and TFT technologies. The R1LP0408D Series has realized higher density, higher performance and low power consumption. The R1LP0408D Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is offered in 32-pin SOP and 32-pin TSOP.	Small Outline Packages	R1LP0408DSP-5SI#B1	3D model available Symbol and footprint available 3	1 Download Model
	71124S15YG Renesas Electronics	1	The 71124 5V CMOS SRAM is organized as 128K x 8. The JEDEC centerpower/GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71124 are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.	Other	71124S15YG	3D model available Symbol and footprint available 3	1 Download Model
	R1WV6416RSA-5SI#S0 Renesas Electronics	1	Support is limited to customers who have already adopted these products.Renesas is the worldwide #1 Low Power SRAM supplier with a full lineup and well balanced long term support. High density and high performance RAMs using Renesas's original technology, for example the Advanced LPSRAM new memory cell concept are offered.	Small Outline Packages	R1WV6416RSA-5SI#S0	3D model available Symbol and footprint available 3	1 Download Model
	71321LA55TFG Renesas Electronics	1	The 71321 is a high-speed 2K x 8 Dual-Port Static RAM with internal interrupt logic for interprocessor communications. It is designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 71421 "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low sta	Quad Flat Packages	71321LA55TFG	3D model available Symbol and footprint available 3	1 Download Model
	7143LA35GB Renesas Electronics	1	The 7143 is a high-speed 2K x 16 Dual-Port Static RAMs. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 32-bit-or-wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. Military grade product in compliance with MIL-PRF-38535 QML is available.	Other	7143LA35GB	3D model available Symbol and footprint available 3	1 Download Model
	71V424L15PHG8 Renesas Electronics	1	The 71V424 3.3V CMOS SRAM is organized as 512K x 8. All bidirectional inputs and outputs of the 71V424 are TTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.	Small Outline Packages	71V424L15PHG8	3D model available Symbol and footprint available 3	1 Download Model

	70261L15PFG Renesas Electronics	1	The 70261 is a high-speed 16K x 16 Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 32-bit-or-more word systems. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode.	Quad Flat Packages	70261L15PFG	3D model available Symbol and footprint available 3	1 Download Model
	6116LA25TDB Renesas Electronics	1	The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.	Ceramic Dual-In-Line Packages	6116LA25TDB	3D model not available Symbol and footprint available 2	1 Download Model
	70V631S15BC8 Renesas Electronics	1	The 70V631 is a high-speed 256K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 36-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 36-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each po	BGA	70V631S15BC8	3D model available Symbol and footprint available 3	1 Download Model
	70V7339S166BCGI Renesas Electronics	1	The 70V7339 is a high-speed 512K x 18 (9Mbit) synchronous Bank-Switchable Dual-Ported SRAM is organized into 64 independent 8K x 18 banks and has two independent ports with separate control, address, and I/O pins for each port, allowing each port to access any 8K x 18 memory block not already accessed by the other port. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode.	BGA	70V7339S166BCGI	3D model available Symbol and footprint available 3	1 Download Model
	71V3579S75PFG8 Renesas Electronics	1	The 71V3579 3.3V CMOS SRAM is organized as 256K x 18. The 71V3579 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.	Quad Flat Packages	71V3579S75PFG8	3D model available Symbol and footprint available 3	1 Download Model
	70V7599S166BF Renesas Electronics	1	The 70V7599 is a high-speed 128K x 36 (4Mbit) synchronous Bank-Switchable Dual-Ported SRAM is organized into 64 independent 2Kx36 banks and has two independent ports with separate control, address, and I/O pins for each port, allowing each port to access any 2Kx36 memory block not already accessed by the other port. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode.	BGA	70V7599S166BF	3D model available Symbol and footprint available 3	1 Download Model
	5962-3829415MZA Renesas Electronics	1	The 5962-38294 (7164 SRAM) is organized as 8K x 8 and offers a reduced power standby mode. The low-power version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs are TTL-compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation.	Ceramic Dual-In-Line Packages	5962-3829415MZA	3D model not available Symbol and footprint available 2	1 Download Model
	71V67903S75BQ8 Renesas Electronics	1	The 71V67903 3.3V CMOS SRAM is organized as 512K x 18. The 71V67903 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.	BGA	71V67903S75BQ8	3D model available Symbol and footprint available 3	1 Download Model
	RMLV1616AGSA-5U2#AA0 Renesas Electronics	1	The RMLV1616A-U Series is a family of 16-Mbit asynchronous SRAMs organized 1,048,576-word × 16-bit.The RMLV1616A-U Series has realized higher soft error immunity compared to typical SRAMs with on-chip ECC, archived by Renesas’s unique Advanced LPSRAM technologies. Therefore, it is suitable for battery backup systems.It is offered in 48pin TSOP (I) or 48-ball fine pitch ball grid array.	Small Outline Packages	RMLV1616AGSA-5U2#AA0	3D model available Symbol and footprint available 3	1 Download Model
	RMWV6416AGBG-5S2#AC0 Renesas Electronics	1	The RMWV6416A Series is a family of 64-Mbit static RAMs organized 4, 194, 304-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMWV6416A Series has realized higher density, higher performance and low power consumption. The RMWV6416A Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is offered in 48pin TSOP (I), 52pin TSOP (II) or 48-ball fine pitch ball grid array.	BGA	RMWV6416AGBG-5S2#AC0	3D model available Symbol and footprint available 3	1 Download Model
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