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M24M01-DWDW3TP/K
STMicroelectronics
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1 | Automotive 1-Mbit serial I²C bus EEPROM with 1 MHz clock | Small Outline Packages | M24M01-DWDW3TP/K |
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M24512E-FMN6TP
STMicroelectronics
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0 | 512-Kbit serial I²C bus EEPROM with configurable device address, software write protection registers and preprogrammed device address | Small Outline Packages | M24512E-FMN6TP |
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CAV24C256WE-GT3
onsemi
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1 | Automotive Temperature Grade 1 (-40°C to +125°C) ; Supports Standard, Fast and Fast-Plus I2C Protocol; 64-Byte Page Write Buffer; Hardware Write Protection for Entire Memory; Schmitt Triggers and Noise Suppression Filters on I2C Bus Inputs (SCL and SDA); Low Power CMOS Technology; 1,000,000 Program/Erase Cycles; 100 Year Data Retention; 8-lead SOIC and TSSOP Packages; This Device is Pb-Free, Halogen Free/BFR Free and RoHS Compliant | Small Outline Packages | CAV24C256WE-GT3 |
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M24C32-RMN6TP
STMicroelectronics
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1 | 32-Kbit serial I²C bus EEPROM | Small Outline Packages | M24C32-RMN6TP |
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M95512-DFMC6TG
STMicroelectronics
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1 | STMICROELECTRONICS - M95512-DFMC6TG - EEPROM, 512KBIT, SPI, 16MHZ, UFDFPN-8 | Other | M95512-DFMC6TG |
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M95320-RMN6P
STMicroelectronics
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1 | 32-Kbit serial SPI bus EEPROM with high-speed clock | Small Outline Packages | M95320-RMN6P |
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M24M01E-FMC6TG
STMicroelectronics
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1 | 1-Mbit serial I²C bus EEPROM with configurable device address, software write protection registers, and preprogrammed device address | Other | M24M01E-FMC6TG |
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R1EV58064BTCRBI#B0
Renesas Electronics
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1 | Support is limited to customers who have already adopted these products.Renesas Electronics’ R1EV58064BxxN series and R1EV58064BxxR series are electrically erasable and programmable EEPROM’s organized as 8192-word 8-bit. They have realized high speed, low power consumption and high reliability by employing advanced MONOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster. | Small Outline Packages | R1EV58064BTCRBI#B0 |
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M24C02-RDW6TP
STMicroelectronics
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1 | M24C02-RDW6TP, Serial EEPROM Memory 2kbit, Serial-I2C, 900ns, 1.8V, 8-Pin TSSOP | Small Outline Packages | M24C02-RDW6TP |
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M24128-DRMN8TP/K
STMicroelectronics
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1 | EEPROM Serial-I2C 128K-bit 16K x 8 2.5V/3.3V/5V Automotive 8-Pin SO N T/R | Small Outline Packages | M24128-DRMN8TP/K |
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NV25320DWHFT3G
onsemi
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1 | Automotive Temperatures Grade0: -40°C to +150°C/VCC = 2.5 V to 5.5 V; SOIC and TSSOP 8−pad Packages; 20/ 10 MHz SPI Compatible; SPI Modes (0,0) & (1,1); 32-byte Page Write Buffer; Self-timed Write Cycle; Hardware and Software Protection; Block Write Protection - Protect ¼, ½ or Entire EEPROM Array; Low Power CMOS Technology; 200 Year Data Retention; Additional Identification Page with Permanent Write Protection; NV Prefix for Automotive and Other Applications Requiring Site and Change Control; Program/Erase | Small Outline Packages | NV25320DWHFT3G |
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R1EV58256BTCNBI#B0
Renesas Electronics
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1 | Support is limited to customers who have already adopted these products.Renesas Electronics’ R1EV58256BxxN series and R1EV58256BxxR series are electrically erasable and programmable EEPROM’s organized as 32768-word 8-bit. They have realized high speed, low power consumption and high reliability by employing advanced MONOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster. | Small Outline Packages | R1EV58256BTCNBI#B0 |
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M95020-WDW6TP
STMicroelectronics
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1 | 4 Kbit, 2 Kbit and 1 Kbit serial SPI bus EEPROM with high-speed clock | Small Outline Packages | M95020-WDW6TP |
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M93C56-RMN3TP/K
STMicroelectronics
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1 | Automotive 16-Kbit, 8-Kbit, 4-Kbit, 2-Kbit and 1-Kbit (8-bit or 16-bit wide) MICROWIRE™ serial EEPROM | Small Outline Packages | M93C56-RMN3TP/K |
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R1EV58064BDANBI#B0
Renesas Electronics
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1 | Support is limited to customers who have already adopted these products.Renesas Electronics’ R1EV58064BxxN series and R1EV58064BxxR series are electrically erasable and programmable EEPROM’s organized as 8192-word 8-bit. They have realized high speed, low power consumption and high reliability by employing advanced MONOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster. | Dual-In-Line Packages | R1EV58064BDANBI#B0 |
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NV24C08DWVLT3G
onsemi
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1 | 1.7 V to 5.5 V Supply Voltage Range; 16−Byte Page Write Buffer; Fast Write Time (4 ms max); Hardware Write Protection for Entire Memory; Schmitt Triggers and Noise Suppression Filters on I2C Bus Inputs (SCL and SDA); Low Power CMOS Technology; 1,000,000 Program/Erase Cycles; 100 Year Data Retention; Automotive Grade 1 Temperature Range; US-8, TSOP-5, UDFN-8,SOIC-8 and TSSOP-8 Packages; This Device is Pb−Free, Halogen Free/BFR Free, and RoHS Compliant | Small Outline Packages | NV24C08DWVLT3G |
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25CS640-I/MS
Microchip
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1 | IC MEMORY EEPROM 64MB SPI 8-Lead MSOP | Small Outline Packages | 25CS640-I/MS |
3
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AT25320B-MAHL-T
Microchip
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1 | EEPROM 32K Density SPI 4,096 x 8 Organ | Small Outline No-lead | AT25320B-MAHL-T |
3
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11AA020T-I/TT
Microchip
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1 | 2K 256X8 1.8V Ser. EEPROM,11AA020T-I/TT | SOT23 (3-Pin) | 11AA020T-I/TT |
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AT24C04D-MAHM-T
Microchip
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1 | EEPROM 1.7-3.6V, 1MHz, Ind Tmp, 8-UDFN | Small Outline No-lead | AT24C04D-MAHM-T |
3
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25LC080DT-E/MNY
Microchip
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1 | EEPROM 8K 1K X 8 32B PAGE 2.5V SER EE EXT | Small Outline No-lead | 25LC080DT-E/MNY |
3
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X28HC64J-90T1
Renesas Electronics
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1 | EEPROM 8K X 8, CMOS EEPROM,SDP, 32 PLCC,COM.,90NS T&R | Plastic Leaded Chip Carrier | X28HC64J-90T1 |
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24VL014T/OT
Microchip
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1 | EEPROM Serial-I2C 1K-bit 128 x 8 1.8V/2.5V/3.3V Automotive 6-Pin SOT-23 T/R | SOT23 (6-Pin) | 24VL014T/OT |
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93LC46AT-I/OT
Microchip
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1 | 1K, 128 X 8 SERIAL EEPROM, IND | SOT23 (6-Pin) | 93LC46AT-I/OT |
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24AA64/P
Microchip
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1 | EEPROM 8kx8 - 1.8V | Dual-In-Line Packages | 24AA64/P |
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