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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	FDMS3660S Fairchild Semiconductor Corporation	1	Small Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA	FDMS3660S	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDMS3660AS onsemi	1	Small Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA	FDMS3660AS	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDMS3016DC Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 18A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA	FDMS3016DC	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDMS3660S-AU01 onsemi	1	Small Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA	FDMS3660S-AU01	3D model not available Symbol and footprint not available 0	0 Build or Request

	FDMS3572 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 8.8A I(D), 80V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	FDMS3572	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDMS3668S onsemi	1	Small Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA	FDMS3668S	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDMS3620S onsemi	1	Small Signal Field-Effect Transistor, 17.5A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	FDMS3620S	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDMS3686S Fairchild Semiconductor Corporation	1	Small Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	FDMS3686S	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDMS3606AS onsemi	1	30V Asymmetric Dual N-Channel MOSFET, PowerTrench® Power Stage	FDMS3606AS	3D model available Symbol and footprint not available 1	1 Download Model
	FDMS3664S onsemi	1	Low inductance packaging shortens rise/fall times, resulting in lower switching losses; RoHS Compliant; Q2: N-Channel Max rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 25 A Max rDS(on) = 3.2 mΩ at VGS = 4.5 V, ID = 22 A; Q1: N-Channel Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A; MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing	FDMS3664S	3D model available Symbol and footprint not available 1	1 Download Model
	FDMS3500 onsemi	1	N-Channel PowerTrench® MOSFET 75V, 49A, 14.5mΩ	FDMS3500	3D model available Symbol and footprint not available 1	1 Download Model
	FDMS3629S onsemi	1	Power Field-Effect Transistor	FDMS3629S	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDMS3500 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 9.2A I(D), 75V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	FDMS3500	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDMS3006SDC Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 34A I(D), 30V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA	FDMS3006SDC	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDMS3604S Fairchild Semiconductor Corporation	1	Small Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	FDMS3604S	3D model not available Symbol and footprint not available 0	0 Build or Request

	FDMS3624S Fairchild Semiconductor Corporation	1	Small Signal Field-Effect Transistor, 17.5A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	FDMS3624S	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDMS3602AS onsemi	1	Power Field-Effect Transistor, 15A I(D), 25V, 0.0056ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	FDMS3602AS	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDMS3016DC onsemi	1	N-Channel Dual CoolTM 56 PowerTrench® MOSFET 30V, 49A, 6.0mΩ	FDMS3016DC	3D model available Symbol and footprint not available 1	1 Download Model
	FDMS3604S onsemi	1	Q1: N-Channel Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A; RoHS Compliant ; MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing ; Low inductance packaging shortens rise/fall times, resulting in lower switching losses ; Q2: N-Channel Max rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 23 A Max rDS(on) = 3.5 mΩ at VGS = 4.5 V, ID = 21 A	FDMS3604S	3D model available Symbol and footprint not available 1	1 Download Model
	FDMS3626S onsemi	1	Small Signal Field-Effect Transistor, 17.5A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	FDMS3626S	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDMS3669S Fairchild Semiconductor Corporation	1	Small Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA	FDMS3669S	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDMS3604AS onsemi	1	Small Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	FDMS3604AS	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDMS3669S onsemi	1	Power Field-Effect Transistor	FDMS3669S	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDMS3008SDC Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 29A I(D), 30V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA	FDMS3008SDC	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDMS36101L_F085 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 38A I(D), 100V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	FDMS36101L_F085	3D model not available Symbol and footprint not available 0	0 Build or Request
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