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NSS40301MZ4T1G
onsemi
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1 | NSS40300MZ4 is PNP complimentary device; Low Collector-Emitter Saturation Voltage; High DC Current Gain; High Current-Gain Bandwidth Product; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant | SOT223 (3-Pin) | NSS40301MZ4T1G |
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NSS1C200MZ4T1G
onsemi
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1 | High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta); NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable | SOT223 (3-Pin) | NSS1C200MZ4T1G |
3
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NSS1C200MZ4T3G
onsemi
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1 | High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta); NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable | SOT223 (3-Pin) | NSS1C200MZ4T3G |
3
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NSS40300MZ4T1G
onsemi
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1 | NSS40301MZ4 is NPN complimentary device; Low Collector-Emitter Saturation Voltage; High DC Current Gain; High Current-Gain Bandwidth Product; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant | SOT223 (3-Pin) | NSS40300MZ4T1G |
3
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EKMZ421VSN471MR35S
Chemi-Con
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1 | Aluminum Electrolytic Capacitors - Snap In 470uF 420V 20% 30X35 | Other | EKMZ421VSN471MR35S |
3
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KMZ49
NXP
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1 | Angular Magnetoresistive Sensor 25KA/m Magnetic Field Automotive AEC-Q101 8-Pin SO T/R | Small Outline Packages | KMZ49 |
3
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NSV60600MZ4T1G
onsemi
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1 | Low Collector-Emitter Saturation Voltage; High DC Current Gain; High Current-Gain Bandwidth Product; Superior gain linearity; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant | SOT223 (3-Pin) | NSV60600MZ4T1G |
3
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NSS1C201MZ4T1G
onsemi
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1 | These are PbFree Devices; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable | SOT223 (3-Pin) | NSS1C201MZ4T1G |
3
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NSS60600MZ4T1G
onsemi
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1 | Low Collector-Emitter Saturation Voltage; High DC Current Gain; High Current-Gain Bandwidth Product; Superior gain linearity; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant | SOT223 (3-Pin) | NSS60600MZ4T1G |
3
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EKMZ451VSN121MP25S
Chemi-Con
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1 | Aluminum Electrolytic Capacitors - Snap In 120uF 450V 20% 22X25 | Capacitor, Polarized Radial Diameter | EKMZ451VSN121MP25S |
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DSS60601MZ4-13
Diodes Incorporated
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1 | Diodes Inc DSS60601MZ4-13 NPN Bipolar Transistor, 6 A, 60 V SOT-223 | SOT223 (3-Pin) | DSS60601MZ4-13 |
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DSS60600MZ4-13
Diodes Incorporated
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1 | Diodes Inc DSS60600MZ4-13 PNP Bipolar Transistor, -6 A, -60 V SOT-223 | SOT223 (3-Pin) | DSS60600MZ4-13 |
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NSV60600MZ4T3G
onsemi
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1 | Low Collector-Emitter Saturation Voltage; High DC Current Gain; High Current-Gain Bandwidth Product; Superior gain linearity; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant | SOT223 (3-Pin) | NSV60600MZ4T3G |
3
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NSV40300MZ4T1G
onsemi
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1 | NSS40301MZ4 is NPN complimentary device; Low Collector-Emitter Saturation Voltage; High DC Current Gain; High Current-Gain Bandwidth Product; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant | SOT223 (3-Pin) | NSV40300MZ4T1G |
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NSS40300MZ4T3G
onsemi
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1 | NSS40301MZ4 is NPN complimentary device; Low Collector-Emitter Saturation Voltage; High DC Current Gain; High Current-Gain Bandwidth Product; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant | SOT223 (3-Pin) | NSS40300MZ4T3G |
3
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NSV60601MZ4T3G
onsemi
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1 | Low Collector-Emitter Saturation Voltage; High DC Current Gain; High Current-Gain Bandwidth Product; Superior gain linearity; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant | SOT223 (3-Pin) | NSV60601MZ4T3G |
3
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IRF6668TRPBF
Infineon
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1 | INFINEON - IRF6668TRPBF - MOSFET, N-CH, 80V, 55A, DIRECTFET MZ | Other | IRF6668TRPBF |
3
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BSB165N15NZ3GXUMA1
Infineon
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1 | MOSFET N-Ch 150V 45A CanPAK3 MZ OptiMOS 3 | Other | BSB165N15NZ3GXUMA1 |
3
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TJ-S3227SW1TCGLC2R2G-A5
TOGIALED
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1 | 3.2mmⅹ2.7mm 4 SMT LED,3.2x2.7mm,30mA,5V,-40℃~+80℃ | Other | TJ-S3227SW1TCGLC2R2G-A5 |
3
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K4B4G0846E-BMMA
SAMSUNG
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1 | 4 Gb DRAM | BGA | K4B4G0846E-BMMA |
3
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ECEA1HKSR47
Panasonic
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1 | 4 Dia 5 | Capacitor, Polarized Radial Diameter | ECEA1HKSR47 |
3
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WJHB9500M-9.5-04P-13-00A
Ningbo Kangnex
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1 | Screw header, 4 pole | Header, Receptacle - Straight PTH Box | WJHB9500M-9.5-04P-13-00A |
3
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111099-0030
Seeed Studio
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1 | PCB connector 4 position | Other | 111099-0030 |
3
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EL357NA-VG
Everlight
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1 | 4 PIN SOP PHOTOTRANSISTOR PHOTOCOUPLER | Other | EL357NA-VG |
2
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04513.50NRL
LITTELFUSE
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1 | 1/16 –15 4 hours, Minimum | Other | 04513.50NRL |
2
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