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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	NTHL025N065SC1 onsemi	1	Power Field-Effect Transistor, 99A I(D), 650V, 0.0285ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247		NTHL025N065SC1	3D model not available Symbol and footprint not available 0	0 Build or Request
	NTHL040N65S3HF onsemi	1	Power Field-Effect Transistor, 65A I(D), 650V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247		NTHL040N65S3HF	3D model not available Symbol and footprint not available 0	0 Build or Request
	NTHL027N65S3HF onsemi	1	MOSFET FRFET 650V 75A 27.4mOhm		NTHL027N65S3HF	3D model available Symbol and footprint not available 1	1 Download Model
	NTHL019N60S5F onsemi	1	Ultra Low Gate Charge (Typ. Qg = 252 nC); Low Time Related Output Capacitance (Typ. Coss(tr.) = 3174 pF); Optimized Capacitance; Excellent body diode performance (low Qrr, robust body diode); 650 V @ TJ = 150 °C; Typ. RDS(on) = 15.2 mΩ; 100% Avalanche Tested; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant; Internal Gate Resistance: 3.5 Ω		NTHL019N60S5F	3D model available Symbol and footprint not available 1	1 Download Model

	NTHL082N65S3HF onsemi	1	Power Field-Effect Transistor, 40A I(D), 650V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247		NTHL082N65S3HF	3D model not available Symbol and footprint not available 0	0 Build or Request
	NTHL065N65S3HF onsemi	1	Power Field-Effect Transistor, 46A I(D), 650V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247		NTHL065N65S3HF	3D model not available Symbol and footprint not available 0	0 Build or Request
	NTHL095N65S3H onsemi	1	Power Field-Effect Transistor, 30A I(D), 650V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247		NTHL095N65S3H	3D model not available Symbol and footprint not available 0	0 Build or Request
	NTHL019N65S3H onsemi	1	Power Field-Effect Transistor, 75A I(D), 650V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB		NTHL019N65S3H	3D model not available Symbol and footprint not available 0	0 Build or Request
	NTHL061N60S5H onsemi	1	Ultra Low Gate Charge (Typ. Qg = 73.2 nC); Low Energy Related Output Capacitance (Typ. Coss(eff.) = 100 pF); Fast switching performance with robust body diode; 650 V @ TJ = 150°C; Typ. RDS(on) = 32.8 m Ω; 100% Avalanche Tested; RoHS Compliant; Internal Gate Resistance: 0.69 Ω		NTHL061N60S5H	3D model available Symbol and footprint not available 1	1 Download Model
	NTHL032N065M3S onsemi	1	Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M3S, TO-247-3L		NTHL032N065M3S	3D model available Symbol and footprint not available 1	1 Download Model
	NTHL099N60S5 onsemi	1	Ultra Low Gate Charge (Typ. Qg= 48 nC); Low Time Related Output Capacitance (Typ. Coss(tr.)= 642 pF); Optimized Capacitance; 650 V @ TJ = 150°C; Typ. RDS(on) = 79.2 m Ω; 100% Avalanche Tested; RoHS Compliant; Internal Gate Resistance: 6.9 Ω		NTHL099N60S5	3D model available Symbol and footprint not available 1	1 Download Model
	NTHL022N120M3S onsemi	1	New M3S technology: 22 mohm RDS(ON) with low Eon and Eoff losses; Ultra Low Gate Charge (QG(tot) = 137 nC); High Speed Switching with Low Capacitance (Coss = 146 pF); 15V to 18V Gate Drive; Excellent FOM [ = Rdson * Eoss ]; 100% Avalanche Tested; Halide Free and RoHS Compliant		NTHL022N120M3S	3D model available Symbol and footprint not available 1	1 Download Model

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