SA15- Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	53A-CBSA-1.5X2.5X0.5 Leader Tech Inc.	1	RF SHIELD 1.5" X 2.5" T/H	Other	53A-CBSA-1.5X2.5X0.5	3D model available Symbol and footprint available 3	1 Download Model
	2SA1576U3T106 ROHM Semiconductor	1	General Purpose Transistor (-50V, -150mA, RL	Other	2SA1576U3T106	3D model available Symbol and footprint available 3	1 Download Model
	2SA1587-BL Toshiba	1	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process),Bipolar (BJT) Transistor PNP 120 V 100 mA 100MHz 100 mW Surface Mount SC-70	Other	2SA1587-BL	3D model available Symbol and footprint available 3	1 Download Model
	2SA1588-O,LF Toshiba	1	Bipolar Transistors - BJT Bias Resistor Built-in transistor	Other	2SA1588-O,LF	3D model available Symbol and footprint available 3	1 Download Model

	2SA1576AT106S ROHM Semiconductor	1	Bipolar Transistors - BJT PNP 50V 0.15A SOT-323	SO Transistor Flat Lead	2SA1576AT106S	3D model available Symbol and footprint available 3	1 Download Model
	2SA1577T106 ROHM Semiconductor	1	PNP Driver Transistor: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.	SOT23 (3-Pin)	2SA1577T106	3D model available Symbol and footprint available 3	1 Download Model
	2SA1576AT106R ROHM Semiconductor	1	ROHM - 2SA1576AT106R - Bipolar (BJT) Single Transistor, PNP, -50 V, 140 MHz, 200 mW, -150 mA, 120 hFE	SOT23 (3-Pin)	2SA1576AT106R	3D model available Symbol and footprint available 3	1 Download Model
	25-CBSA-1.5X2.0X0.225 Leader Tech Inc.	1	RF Shield Shield, 2-Piece 1.500" (38.10mm) X 2.000" (50.80mm) Non-Vented Surface Mount, Through Hole	Other	25-CBSA-1.5X2.0X0.225	3D model available Symbol and footprint available 3	1 Download Model
	MCS2S-A15F Multicomp Pro	1	MULTICOMP PRO MCS2S-A15FSlide Switch, SPDT, (On)-Off-(Off), Surface Mount, MCS2S, 300 mA	Other	MCS2S-A15F	3D model not available Symbol and footprint available 2	1 Download Model
	DSA15IM200UC LITTELFUSE	1	Schottky Diodes & Rectifiers Schottky Diode Gen 2	Other	DSA15IM200UC	3D model available Symbol and footprint available 3	1 Download Model
	2SA1588-Y,LF Toshiba	1	Bipolar Transistors - BJT Transistor for Low Freq. Amplification	Other	2SA1588-Y,LF	3D model available Symbol and footprint available 3	1 Download Model
	71V3556SA150BQ Renesas Electronics	1	The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers.	BGA	71V3556SA150BQ	3D model available Symbol and footprint available 3	1 Download Model
	TX2SA-1.5V-TH-Z Panasonic	1	7.5 A inrush current possible, 2 Form C small size relays	Other	TX2SA-1.5V-TH-Z	3D model available Symbol and footprint available 3	1 Download Model
	DE21XSA150KA2BT01F Murata Electronics	1	Capacitor 15pF ±10% DE2 D=6mm T=5mm F=5mm d=0.6mm	Other	DE21XSA150KA2BT01F	3D model available Symbol and footprint available 3	1 Download Model
	DLP0NSA150HL2B Murata Electronics	1	DLP0NSA_L2B Series EMI Suppression Filter 15Ω at 100MHz 100mA 5V	Other	DLP0NSA150HL2B	3D model available Symbol and footprint available 3	1 Download Model

	71256SA15TPG Renesas Electronics	1	The 71256SA 5V CMOS SRAM is organized as 32K x 8. All bidirectional inputs and outputs of the 71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.	Dual-In-Line Packages	71256SA15TPG	3D model available Symbol and footprint available 3	1 Download Model
	TQ2SA-1.5V Panasonic	1	Flat, 5 mm 2 Form C, 2 A, relays	Other	TQ2SA-1.5V	3D model available Symbol and footprint available 3	1 Download Model
	71V016SA15YG Renesas Electronics	1	The 71V016 3.3V CMOS SRAM is organized as 64K x 16. All bidirectional inputs and outputs of the 71V016 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.	Other	71V016SA15YG	3D model available Symbol and footprint available 3	1 Download Model
	TXS2SA-1.5V-1-Z Panasonic	1	High sensitivity, 50 mW operating power, 2 Form C and 1 A relays	Other	TXS2SA-1.5V-1-Z	3D model available Symbol and footprint available 3	1 Download Model
	TXD2SA-1.5V-1 Panasonic	1	6,000 V surge withstand voltage, 2 Form C and 2 A high dielectric strength relays	Other	TXD2SA-1.5V-1	3D model available Symbol and footprint available 3	1 Download Model
	6116SA15SOG8 Renesas Electronics	1	The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.	Small Outline Packages	6116SA15SOG8	3D model not available Symbol and footprint available 2	1 Download Model
	71V3556SA150BGGI Renesas Electronics	1	The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers.	BGA	71V3556SA150BGGI	3D model available Symbol and footprint available 3	1 Download Model
	71V256SA15PZGI8 Renesas Electronics	1	The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode (CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.	Other	71V256SA15PZGI8	3D model available Symbol and footprint available 3	1 Download Model
	71V016SA15PHG Renesas Electronics	1	The 71V016 3.3V CMOS SRAM is organized as 64K x 16. All bidirectional inputs and outputs of the 71V016 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.	Small Outline Packages	71V016SA15PHG	3D model available Symbol and footprint available 3	1 Download Model
	71V3556SA150BGGI8 Renesas Electronics	1	The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers.	BGA	71V3556SA150BGGI8	3D model available Symbol and footprint available 3	1 Download Model
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