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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
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SA180CA LITTELFUSE
1 ESD Suppressors / TVS Diodes SA180CA Bi-Directional Other SA180CA 1 Download Model
Part Image Part Image 1 Inductors for high frequency circuits, Multilayer ceramic Other MHQ0402PSA18NHT000 1 Download Model
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71V35761SA183BG Renesas Electronics
1 The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. BGA 71V35761SA183BG 1 Download Model
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2SA1832 Toshiba
1 PNP Bipolar Transistor, -50 V, -0.15 A, SOT-416(SSM) Other 2SA1832 1 Download Model
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71V35761SA183BGI Renesas Electronics
1 The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. BGA 71V35761SA183BGI 1 Download Model
Part Image Part Image 1 500WATTS TVS 5.0 to 170 VOLTS Diodes, Axial Diameter Horizontal Mounting SA18CA-TP 1 Download Model
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71V35761SA183BQG8 Renesas Electronics
1 The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. BGA 71V35761SA183BQG8 1 Download Model
Part Image Part Image 1 29.2V Clamp 17.5A Ipp Tvs Diode Through Hole DO-15 Diodes, Axial Diameter Horizontal Mounting SA18CA-AP 1 Download Model
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71V35761SA183BGG Renesas Electronics
1 The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. BGA 71V35761SA183BGG 1 Download Model
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71V35761SA183BGGI Renesas Electronics
1 The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. BGA 71V35761SA183BGGI 1 Download Model
Part Image Part Image 1 FFC & FPC Connectors Other TF13BSA-18S-0.4SH(800) 1 Download Model
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SA18-11SEKWA Kingbright
1 SA18-11SEKWA Kingbright 7-Segment LED Display, CA Orange 610 mcd RH DP 44.5mm Dual-In-Line Sockets SA18-11SEKWA 1 Download Model
Part Image Part Image 1 Bipolar Transistors - BJT SOT23 (3-Pin) 2SA1832-GR,LF 1 Download Model
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71V35761SA183BGGI8 Renesas Electronics
1 The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. BGA 71V35761SA183BGGI8 1 Download Model
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71V35761SA183BGI8 Renesas Electronics
1 The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. BGA 71V35761SA183BGI8 1 Download Model
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SA18_AY_00001 PanJit Semiconductor
1 Trans Voltage Suppressor Diode, 500W, 18V V(RWM), Unidirectional, 1 Element, Silicon, DO-15 SA18_AY_00001 0 Build or Request
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SA18_B0_10001 PanJit Semiconductor
1 Trans Voltage Suppressor Diode, 500W, 18V V(RWM), Unidirectional, 1 Element, Silicon, DO-15 SA18_B0_10001 0 Build or Request
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SA18_B0_00001 PanJit Semiconductor
1 Trans Voltage Suppressor Diode, 500W, 18V V(RWM), Unidirectional, 1 Element, Silicon, DO-15 SA18_B0_00001 0 Build or Request
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SA18_AY_10001 PanJit Semiconductor
1 Trans Voltage Suppressor Diode, 500W, 18V V(RWM), Unidirectional, 1 Element, Silicon, DO-15 SA18_AY_10001 0 Build or Request
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SA18_R2_00001 PanJit Semiconductor
1 Trans Voltage Suppressor Diode, 500W, 18V V(RWM), Unidirectional, 1 Element, Silicon, DO-15 SA18_R2_00001 0 Build or Request
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SA18_R2_10001 PanJit Semiconductor
1 Trans Voltage Suppressor Diode, 500W, 18V V(RWM), Unidirectional, 1 Element, Silicon, DO-15 SA18_R2_10001 0 Build or Request
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L4-49152X-3-S-A-18-B-X Precision Devices Incorporated
1 QUARTZ CRYSTAL RESONATOR, 49.152MHz, GREEN, HERMETIC SEALED, RESISTANCE WELDED, SMD, 2 PIN L4-49152X-3-S-A-18-B-X 0 Build or Request
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SA18115E8-29.999-GT&R Sunny Electronics Corp
1 Parallel - 3Rd Overtone Quartz Crystal, 29.999MHz Nom SA18115E8-29.999-GT&R 0 Build or Request
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SA18350A7-7.000-I Sunny Electronics Corp
1 Parallel - Fundamental Quartz Crystal, 7MHz Nom SA18350A7-7.000-I 0 Build or Request
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SA18330E6-1.700-ST&R Sunny Electronics Corp
1 Parallel - Fundamental Quartz Crystal, 1.7MHz Nom SA18330E6-1.700-ST&R 0 Build or Request
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