SLG59 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	SLG59M1655VTR Renesas Electronics	1	The SLG59M1655V is designed for load switching applications. The part comes with one 9 A rated MOSFET switched on by an ON control pin. MOSFET turn on time is independently adjusted by an external capacitor.	Other	SLG59M1655VTR	3D model available Symbol and footprint available 3	1 Download Model
	SLG59H1132V Renesas Electronics	1	22 V, 13 mΩ, 6 A Load Switch with VIN Lockout Select and MOSFET Analog Current Monitor Output	Other	SLG59H1132V	3D model available Symbol and footprint available 3	1 Download Model
	SLG59M1460V Renesas Electronics	1	The SLG59M1460V is a 30 mΩ 2.0 A single-channel load switch that is able to switch 0.85 to 3.3 V power rails. The product is packaged in an ultra‑small 1.0 mm x 1.6 mm package.	Other	SLG59M1460V	3D model available Symbol and footprint available 3	1 Download Model
	SLG59M1603VTR Renesas Electronics	1	The SLG59M1603V is designed for power switching applications. The part comes with two 4.5 A rated MOSFETs switched on by two ON control pins. Each MOSFETs turn on time is independently adjusted by an external capacitor.	Other	SLG59M1603VTR	3D model available Symbol and footprint available 3	1 Download Model

	SLG59M1714V Renesas Electronics	1	Operating from a 2.5 V to 5.5 V power supply, the SLG59M1714V is a 15 mΩ, 4 A single-channel load switch with back⁠-to-⁠back reverse‑current blocking when the power switch is disabled. With a fixed VOUT slew rate of 2.8 V/ms, inrush current is internally limited. Incorporating two-stage current protection as well as thermal protection and fault signaling, the SLG59M1714V is designed for all 0.8 V to 5.5 V power rail applications. Fully specified over the -40 °C to 85 °C temperature range, the SLG59M1714V	Other	SLG59M1714V	3D model available Symbol and footprint available 3	1 Download Model
	SLG59M1545VTR Renesas Electronics	1	The SLG59M1545V is a 17 mΩ 2.5 A single‑channel load switch that is able to switch 0.85 to 5.5 V power rails. The product is packaged in an ultra‑small 1.0 mm x 1.6 mm package.	Other	SLG59M1545VTR	3D model available Symbol and footprint available 3	1 Download Model
	SLG59H1009VTR Renesas Electronics	1	The SLG59H1009V is a high-performance, self-powered 13.1 mΩ NMOS load switch designed for all 4.5 to 22 V power rails up to 4 A. Using a proprietary MOSFET design, the SLG59H1009V achieves a stable 13.1 mΩ RDSON across a wide input voltage range. In combining novel FET design and copper pillar interconnects, the SLG59H1009V package also exhibits a low thermal resistance for high-current operation. Designed to operate over a -40 °C to 85 °C range, the SLG59H1009V is available in a low thermal resistance, RoH	Other	SLG59H1009VTR	3D model available Symbol and footprint available 3	1 Download Model
	SLG59M1746CTR Renesas Electronics	1	The SLG59M1746C is a high‑performance 1 A capable, single‑channel load switch designed for high‑side power control applications up to 1 A. This feature‑rich nFET load switch has been optimized for all small form‑factor, single‑cell Li‑ion applications including smartphone, fitness bands, and watches.	BGA	SLG59M1746CTR	3D model available Symbol and footprint available 3	1 Download Model
	SLG59M1735C Renesas Electronics	1	The SLG59M1735C is a high performance 10.5 mΩ, 4 A single-channel nFET load switch which can operate with a 2.5 V to 5.5 V VDD supply to switch power rails from as low as 0.9 V up to the supply voltage. The SLG59M1735C incorporates two-level overload current protection, thermal shutdown protection, and soft-start control which can easily be adjusted by a small external capacitor. Using a proprietary MOSFET design, the SLG59M1735C achieves its stable 10.5 mΩ RDSON across a wide input voltage range. Through t	BGA	SLG59M1735C	3D model available Symbol and footprint available 3	1 Download Model
	SLG59H1127VTR Renesas Electronics	1	The SLG59H1127V is a high-performance, self‑powered 15 mΩ NMOS load switch designed for all 4.5 to 12 V power rails up to 4 A. Using a proprietary MOSFET design, the SLG59H1127V achieves a stable 15 mΩ RDSON across a wide input voltage range. In combining novel FET design and copper pillar interconnects, the SLG59H1127V package also exhibits a low thermal resistance for high‑current operation. Designed to operate over a -40 °C to 85 °C range, the SLG59H1127V is available in a low thermal resistance, RoHS‑co	Other	SLG59H1127VTR	3D model available Symbol and footprint available 3	1 Download Model
	SLG59M1526V Renesas Electronics	1	The SLG59M1526V is a 9A dual-channel power switch with charge pump, ramp control, output discharge, and protection in a single 6mm² package. It is designed for load switching applications. The part comes with two 4.5A rated MOSFETs switched on by two ON control pins. Each MOSFET's turn-on time is independently adjusted by an external capacitor.	Other	SLG59M1526V	3D model available Symbol and footprint available 3	1 Download Model
	SLG59M1512VTR Renesas Electronics	1	The SLG59M1512V is designed for power switching applications. The part comes with two 80 mΩ 1.0 A rated MOSFETs, each controlled by an ON control pin. Each MOSFET’s ramp rate is adjustable depending on the input current level of the ON pin. The product is packaged in an ultra‑small 1.6 mm x 1.0 mm package.	Other	SLG59M1512VTR	3D model available Symbol and footprint available 3	1 Download Model
	SLG59H1313C Renesas Electronics	1	The SLG59H1313C features a low 23 mΩ RDSON internal nFET and protects low‑voltage 2.5 Vdc to 5.5 Vdc operating systems against voltage faults up to 29 Vdc. An internal clamp circuit protects the downstream components from surge voltage up to 100 V. The SLG59H1313C features a fast 50 ns (typ) over‑voltage response time that turns off the internal nFET if the input voltage exceeds the OVP threshold. The OVP threshold is adjustable with optional external resistors to any voltage between 4 V and 20 V. Over‑temp	BGA	SLG59H1313C	3D model available Symbol and footprint available 3	1 Download Model
	SLG59M1746C Renesas Electronics	1	The SLG59M1746C is a high‑performance 1 A capable, single‑channel load switch designed for high‑side power control applications up to 1 A. This feature‑rich nFET load switch has been optimized for all small form‑factor, single‑cell Li‑ion applications including smartphone, fitness bands, and watches.	BGA	SLG59M1746C	3D model available Symbol and footprint available 3	1 Download Model
	SLG59M1707V Renesas Electronics	1	Operating from a 2.5 V to 5.5 V power supply and fully specified over the -40 °C to 125 °C extended industrial temperature range, the SLG59M1707V is a high‑performance 13 mΩ, 3.5 A single‑channel nFET load switch designed for all 0.8 V to 5.5 V power rail applications. With a fixed VOUT slew rate of 3 V/ms, inrush current is internally limited. Using a proprietary MOSFET design, the SLG59M1707V achieves a stable 13 mΩ RDSON across a wide input/supply voltage range. The SLG59M1707V also incorporates resistor	Other	SLG59M1707V	3D model available Symbol and footprint available 3	1 Download Model

	SLG59H1010V Renesas Electronics	1	A 13.3 mΩ, 5 A Integrated Power Switch with 12 V / 24 V VIN Lockout Select and MOSFET Current Monitor Output	Other	SLG59H1010V	3D model available Symbol and footprint available 3	1 Download Model
	SLG59M1495VTR Renesas Electronics	1	The SLG59M1495V is designed for load switching applications. The part comes with one 80 mΩ 1.0 A‑rated MOSFET controlled by a single ON control pin. The MOSFET’s ramp rate is adjustable depending on the input current level of the ON pin. The product is packaged in an ultra‑small 1.0 mm x 1.0 mm package.	Other	SLG59M1495VTR	3D model available Symbol and footprint available 3	1 Download Model
	SLG59H1302CTR Renesas Electronics	1	The SLG59H1302C is a 130 V surge‑protected, 28 V tolerant power splitter with two high‑current switches and an 0.1 A capable LDO in 28‑ball WLCSP. With independent control for each channel, the SLG59H1302C contains a 6 A capable, 12 mΩ nFET switch for the BUS‑to‑OUT path and a reverse‑blocking 6 A capable, 24 mΩ nFET switch for the BUS‑to‑SYS path. An internal, “always ON” LDO is 0.1 A capable and can be used to supply power to downstream devices when the BUS terminal voltage is higher than 2.7 V. When the	BGA	SLG59H1302CTR	3D model available Symbol and footprint available 3	1 Download Model
	SLG59M1717V Renesas Electronics	1	Operating from a 2.5 V to 5.5 V power supply and fully specified over the -40 °C to 85 °C Industrial temperature range, the SLG59M1717V is a high‑performance 4 mΩ, 5 A single‑channel nFET load switch designed for all 0.8 V to 5.5 V power rail applications. The SLG59M1717V features adjustable inrush current control which is achieved by adjusting the VOUT slew rate with an external capacitor. Using a proprietary MOSFET design, the SLG59M1717V achieves a stable 4 mΩ RDSON across a wide input/supply voltage ran	Other	SLG59M1717V	3D model available Symbol and footprint available 3	1 Download Model
	SLG59M301VTR Renesas Electronics	1	The SLG59M301V is a 8.5 mΩ 4 A single-channel load switch that is able to switch 0.85 V to 5.5 V power rails. The product is packaged in an ultra-small 1.5 mm x 2.0 mm package.	Other	SLG59M301VTR	3D model available Symbol and footprint available 3	1 Download Model
	SLG59H1013V Renesas Electronics	1	The SLG59H1013V is a high‑performance 13.3 mΩ NMOS load switch designed to control 12 V or 24 V power rails up to 3.5 A. Using a proprietary MOSFET design, the SLG59H1013V achieves a stable 13.3 mΩ RDSON across a wide input voltage range. In combining novel FET design and copper pillar interconnects, the SLG59H1013V package also exhibits a low thermal resistance for high‑current operation. Designed to operate over a -40 °C to 125 °C range, the SLG59H1013V is available in a low thermal resistance, RoHS‑compl	Other	SLG59H1013V	3D model available Symbol and footprint available 3	1 Download Model
	SLG59H1120VTR Renesas Electronics	1	The SLG59H1120V is a high‑performance, self‑powered 18 mΩ NMOS load switch designed for all 4.5 to 12 V power rails up to 5 A. Using a proprietary MOSFET design, the SLG59H1120V achieves a stable 18 mΩ RDSON across a wide input voltage range and over temperature. In combining novel FET design and copper pillar interconnects, the SLG59H1120V package also exhibits a low thermal resistance for high‑current operation. Designed to operate over a -40 °C to 85 °C range, the SLG59H1120V is available in a low therma	Other	SLG59H1120VTR	3D model available Symbol and footprint available 3	1 Download Model
	SLG59M309V Renesas Electronics	1	The SLG59M309V is a 7.8 mΩ 4 A single-channel load switch that is able to switch 1 to 5.5 V power rails. The product is packaged in an ultra-small 1.5 mm x 2.0 mm package.	Other	SLG59M309V	3D model available Symbol and footprint available 3	1 Download Model
	SLG59M1551V Renesas Electronics	1	The SLG59M1551V is designed for load switching applications. The part comes with one 15.5 mΩ 2.0 A rated MOSFET controlled by a single ON control pin. The product is packaged in an ultra‑small 1.0 mm x 1.0 mm package.	Other	SLG59M1551V	3D model available Symbol and footprint available 3	1 Download Model
	SLG59M1717VTR Renesas Electronics	1	Operating from a 2.5 V to 5.5 V power supply and fully specified over the -40 °C to 85 °C Industrial temperature range, the SLG59M1717V is a high‑performance 4 mΩ, 5 A single‑channel nFET load switch designed for all 0.8 V to 5.5 V power rail applications. The SLG59M1717V features adjustable inrush current control which is achieved by adjusting the VOUT slew rate with an external capacitor. Using a proprietary MOSFET design, the SLG59M1717V achieves a stable 4 mΩ RDSON across a wide input/supply voltage ran	Other	SLG59M1717VTR	3D model available Symbol and footprint available 3	1 Download Model
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