MJD44 Model Download Search Results
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MJD44H11RL
Rochester Electronics LLC
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1 | 8A, 80V, NPN, Si, POWER TRANSISTOR, PLASTIC, CASE 369C-01, DPAK-3 | MJD44H11RL |
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MJD44H11
Rectron Semiconductor
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1 | Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin | MJD44H11 |
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MJD44H11T4
Rochester Electronics LLC
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1 | 8A, 80V, NPN, Si, POWER TRANSISTOR, PLASTIC, CASE 369C-01, DPAK-3 | MJD44H11T4 |
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MJD44H11T5
Rochester Electronics LLC
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1 | 8A, 80V, NPN, Si, POWER TRANSISTOR, PLASTIC, CASE 369C-01, DPAK-3 | MJD44H11T5 |
0
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MJD44E3T4
onsemi
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1 | Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin | MJD44E3T4 |
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MJD44H11
Freescale Semiconductor
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1 | TRANSISTOR,BJT,NPN,80V V(BR)CEO,8A I(C),TO-252 | MJD44H11 |
0
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MJD44H11T5
onsemi
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1 | Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin | MJD44H11T5 |
0
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MJD44E3
Continental Device India Ltd
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1 | Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin | MJD44E3 |
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MJD44E3T4
Rochester Electronics LLC
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1 | 10A, 80V, NPN, Si, POWER TRANSISTOR, PLASTIC, CASE 369C-01, DPAK-3 | MJD44E3T4 |
0
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MJD44H11T4
Freescale Semiconductor
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1 | TRANSISTOR,BJT,NPN,80V V(BR)CEO,8A I(C),TO-252AA | MJD44H11T4 |
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MJD44H11
Galaxy Microelectronics
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1 | Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin | MJD44H11 |
0
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MJD44H11RLG
onsemi
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1 | Complementary Pairs Simplifies Designs; Low Collector Emitter Saturation Voltage VCE(sat) = 1.0 Volt Max @ 8.0 Amperes; Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix); Straight Lead Version in Plastic Sleeves ("-1" Suffix); Lead Formed Version in 16 mm Tape and Reel for Surface Mount ("T4" Suffix); Electrically Similar to Popular D44H/D45H Series; Fast Switching Speeds; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 | MJD44H11RLG |
1
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MJD44H11A
Nexperia
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1 | Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin | MJD44H11A |
0
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MJD44H11-001G
onsemi
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1 | Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin | MJD44H11-001G |
0
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MJD44H11G
onsemi
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1 | Complementary Pairs Simplifies Designs; Low Collector Emitter Saturation Voltage VCE(sat) = 1.0 Volt Max @ 8.0 Amperes; Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix); Straight Lead Version in Plastic Sleeves ("-1" Suffix); Lead Formed Version in 16 mm Tape and Reel for Surface Mount ("T4" Suffix); Electrically Similar to Popular D44H/D45H Series; Fast Switching Speeds; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 | MJD44H11G |
1
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NJVMJD44H11T4G-VF01
onsemi
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1 | Bipolar (BJT) Transistor NPN 80 V 8 A 85MHz 1.75 W Surface Mount DPAK | NJVMJD44H11T4G-VF01 |
1
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NJVMJD44H11D3T4G
onsemi
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1 | Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin | NJVMJD44H11D3T4G |
0
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NJVMJD44E3T4G
onsemi
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1 | Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix); Straight Lead Version in Plastic Sleeves ("-1" Suffix); Lead Formed Version in 16 mm Tape and Reel for Surface Mount ("T4" Suffix); Electrically Similar to Popular D44E3 Device; High DC Gain -- 1000 Min @ 5.0 Adc; Low Sat. Voltage -- 1.5 V @ 5.0 Adc; Compatible With Existing Automatic Pick & Place Equipment; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and P | NJVMJD44E3T4G |
1
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NJVMJD44H11RLG
onsemi
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1 | Complementary Pairs Simplifies Designs; Low Collector Emitter Saturation Voltage VCE(sat) = 1.0 Volt Max @ 8.0 Amperes; Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix); Straight Lead Version in Plastic Sleeves ("-1" Suffix); Lead Formed Version in 16 mm Tape and Reel for Surface Mount ("T4" Suffix); Electrically Similar to Popular D44H/D45H Series; Fast Switching Speeds; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 | NJVMJD44H11RLG |
1
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Download Model | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NJVMJD44H11T4G
onsemi
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1 | Complementary Pairs Simplifies Designs; Low Collector Emitter Saturation Voltage VCE(sat) = 1.0 Volt Max @ 8.0 Amperes; Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix); Straight Lead Version in Plastic Sleeves ("-1" Suffix); Lead Formed Version in 16 mm Tape and Reel for Surface Mount ("T4" Suffix); Electrically Similar to Popular D44H/D45H Series; Fast Switching Speeds; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 | NJVMJD44H11T4G |
1
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934660546118
Nexperia
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1 | Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin | 934660546118 |
0
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Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![Part Image](["https://componentsearchengine.com/graphics/no-image.png",null,null])
![Part Image](["https://componentsearchengine.com/Images/9/NJVMJD44H11T4G-VF01.jpg",null,null])
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