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71V35761SA200BGGI8
Renesas Electronics
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1 | The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V35761SA200BGGI8 |
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71V35761SA200BGGI
Renesas Electronics
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1 | The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V35761SA200BGGI |
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71V3558SA200BQG8
Renesas Electronics
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1 | The 71V3558 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3558 contains data I/O, address and control signal registers. | BGA | 71V3558SA200BQG8 |
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7133SA20PF8
Renesas Electronics
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1 | The 7133 high-speed 2K x 16 Dual-Port Static RAMs is designed to be used as a stand-alone 16-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 7143 "SLAVE" Dual-Port in 32-bit-or-more word width systems. Low-power (LA) versions offer battery backup data retention capability, with each port typically consuming 200μW for a 2V battery. Military grade product in compliance with MIL-PRF-38535 QML is available. | Quad Flat Packages | 7133SA20PF8 |
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RFSA2013SB
Qorvo
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1 | 50 - 6000 MHz, 5 V Voltage Controlled Attenuator | Quad Flat No-Lead | RFSA2013SB |
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71321SA20PF8
Renesas Electronics
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1 | The 71321 is a high-speed 2K x 8 Dual-Port Static RAM with internal interrupt logic for interprocessor communications. It is designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 71421 "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low sta | Quad Flat Packages | 71321SA20PF8 |
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6116SA20TPGI
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Dual-In-Line Packages | 6116SA20TPGI |
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71256SA20PZGI8
Renesas Electronics
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1 | The 71256SA 5V CMOS SRAM is organized as 32K x 8. All bidirectional inputs and outputs of the 71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. | Other | 71256SA20PZGI8 |
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2SA2016-TP
MCC
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1 | 313General PurposeTransistor | Other | 2SA2016-TP |
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2SA2097(TE16L1,NQ)
Toshiba
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1 | Pb-F POWER TRANSISTOR; PW-MOLD; MOQ=2000; PC=1W; F=100KHZ | Other | 2SA2097(TE16L1,NQ) |
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SIT9045AM-23-33S-A20.000000
SiTime
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1 | AEC-Q100, 1 to 150 MHz EMI Reduction Oscillator | Other | SIT9045AM-23-33S-A20.000000 |
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2SA2029M3T5G
onsemi
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1 | Reduces Board Space | Other | 2SA2029M3T5G |
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ASA-20.000MHZ-L-T
ABRACON
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1 | XTAL OSC XO 20.0000MHZ HCMOS SMD | Other | ASA-20.000MHZ-L-T |
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RFSA2033TR7
Qorvo
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1 | 50 - 6000 MHz, 3 - 5 V Low Loss Voltage Controlled Attenuator | Quad Flat No-Lead | RFSA2033TR7 |
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SIT8944BIT73-18SA2.000000
SiTime
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1 | 1 – 110 MHz, -55 to 125°C, Endura™ Series Oscillator | Other | SIT8944BIT73-18SA2.000000 |
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7132SA20J
Renesas Electronics
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1 | The 7132 is a high-speed 2K x 8 Dual-Port Static RAM designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 7142 "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 | Plastic Leaded Chip Carrier | 7132SA20J |
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ADCM-S06R0SA205RB
ABRACON
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1 | 2 F (EDLC) Supercapacitor 6 V Radial 320mOhm @ 1kHz | Other | ADCM-S06R0SA205RB |
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PCB-C-18-SA-20
Adam Tech
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1 | 18 Position FFC, FPC Connector Contacts, Top and Bottom 0.039" (1.00mm) Through Hole, Right Angle | Other | PCB-C-18-SA-20 |
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2SA2088T106
ROHM Semiconductor
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1 | PNP High speed switching Transistor: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market. | SOT23 (3-Pin) | 2SA2088T106 |
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PCB-C-11-SA-20
Adam Tech
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1 | 11 Position FFC, FPC Connector Contacts, Top and Bottom 0.039" (1.00mm) Through Hole, Right Angle | Other | PCB-C-11-SA-20 |
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IDT71V25761YSA200BGI8
Renesas Electronics
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1 | Renesas Electronics | BGA | IDT71V25761YSA200BGI8 |
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DF62WZ-6P-2.2DSA(20)
Hirose
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1 | Headers & Wire Housings 6Pos. Header, 4A, 250V (DC), Water Resistant, Slim In-Line Connector Int. Wire | Other | DF62WZ-6P-2.2DSA(20) |
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DF13-2P-1.25DSA(20)
Hirose
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1 | CONN HEADER VERT 2POS 1.25MM | Other | DF13-2P-1.25DSA(20) |
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RFSA2013SR
Qorvo
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1 | Attenuators 50-6000MHz VCA | Quad Flat No-Lead | RFSA2013SR |
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SA205E224MAR
Kyocera AVX
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1 | Multilayer Ceramic Capacitors MLCC - Leaded 50 VDC 0.22 uF Z5U 2 0 % .2 in | Other | SA205E224MAR |
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