175-R Model Download Search Results
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PNE650100EH-QJ
Nexperia
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1 | 650 V, 10 A hyperfast recovery rectifier , 650 V , 10 A , 50 µA , 3.3 W , -55 175 °C | Other | PNE650100EH-QJ |
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TAJR685K010RNJ
Kyocera AVX
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1 | KYOCERA AVX - TAJR685K010RNJ - Surface Mount Tantalum Capacitor, 6.8 µF, 10 V, 0805 [2012 Metric], ± 10%, 5.2 ohm, R | Capacitor Moulded Polarised | TAJR685K010RNJ |
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39372-0002
Molex
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1 | Pluggable Terminal Blocks SR HDR 7.5MM 2 ASY S R HDR 7.5MM 2 ASY ST | Header, Shrouded - Straight PTH Box | 39372-0002 |
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STTH10R04G
STMicroelectronics
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1 | High efficiency rectifier IF(peak) 10 A VRRM 400 V Tj (max) 175 °C VF (typ) 1.15 V trr (typ.) 15 ns | Other | STTH10R04G |
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FFSD0865B-F085
onsemi
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1 | Max Junction Temperature 175 oC; Avalanche Rated 33mJ; High Surge Current Capacity; Positive Temperature Coefficient; Ease of Paralleling; No Reverse Recovery / No Forward Recovery; AEC-Q101 Qualified | Other | FFSD0865B-F085 |
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NDSH40120C-F155
onsemi
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1 | No Reverse Recovery / No Forward Recovery; Max Junction Temperature 175 °C; Avalanche Rated 309 mJ; High Surge Current Capacity; Positive Temperature Coefficient; Low Vf @ TJ:175 °C | Transistor Outline, Vertical | NDSH40120C-F155 |
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FFSH2065A
onsemi
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1 | Max Junction Temperature 175 °C; High Surge Current Capacity; Positive Temperature Coefficient; No Reverse Recovery / No Forward Recovery; Pb−Free, Halogen Free/BFR Free and RoHS Compliant | Transistor Outline, Vertical | FFSH2065A |
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SM6S15CAHE3-TP
MCC
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1 | Bidirectional 4600 PPPM (W) VRWM 150(V) IR(uA) 24.4 VC (V) IPP189(A) Min VBR 16.7(V) Max VBR 18.5 (V) Tj [max] 175 (°C) | Other | SM6S15CAHE3-TP |
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STTH1602CR
STMicroelectronics
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1 | High frequency ultrafast diode IF(AV) Up to 2 x 10A VRRM 200 V Tj (max) 175 °C VF (typ) 0.78 V trr (typ) 21 ns | Other | STTH1602CR |
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FGD2040G3-F085
onsemi
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1 | IGBT Transistors ECOSPARK3 IGN-IGBT TO252 Single - 10 V, 10 V 23.6 A 125 W -55 C+ 175 C 23.6 A | Other | FGD2040G3-F085 |
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791002004
Würth Elektronik
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1 | WE-RCDS Residual Current Detection Sensor DC 6mA residual direct current detecting RDC-M-Module for mode 3 EV charging If the Residual Current Detection Sensor WE-RCDS is used in combination with a residual current device (RCD) of type A to create an electrical protection device, the offering, manufacturing, and/or distribution of the electrical protection device within the scope of patents EP 2 571 128 B3, CN 103 001 175 B, and US 9,397,494 B2 constitutes a patent infringement, unless you have a license fo | Other | 791002004 |
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BYW29-200G
onsemi
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1 | Lead Temperature for Soldering Purposes: 260 C Max. for 10 Seconds; Shipped 50 units per plastic tube; Marking: BYW29-200; Pb-Free Package is Available; Ultrafast 35 Nanosecond Recovery Time; 175 C Operating Junction Temperature; Popular TO-220 Package; Epoxy Meets UL94, VO @ 1/8''; Low Forward Voltage; Low Leakage Current; High Temperature Glass Passivated Junction Mechanical Characteristics:; Case: Epoxy, Molded; Weight: 1.9 grams (approximately); Finish: All External Surfaces Corrosion Resistant and Term | Transistor Outline, Vertical | BYW29-200G |
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TC74VHC174F
Toshiba
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1 | High speed: fmax = 175 MHz (typ.) at VCC = 5 V Low power dissipation: ICC = 4 μA (max) at Ta = 25°C High noise immunity: VNIH = VNIL = 28% VCC (min) Power down protection is provided on all inputs. Balanced propagation delays: tpLH ∼− tpHL Wide operating voltage range: VCC (opr) = 2 to 5.5 V Low noise: VOLP = 0.8 V (max) Pin and function compatible with 74ALS174 | Small Outline Packages | TC74VHC174F |
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WNSC6D20650TB6J
WeEn Semiconductors
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1 | SiC Schottky Diodes WNSC6D20650TB/TSPAK/REEL 13\" Q1/T1 *STANDARD MARK , 1.27mm pitch , surface mount , 650 V , 120 A , -55 °C to 175 °C | Other | WNSC6D20650TB6J |
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87264-2053
Molex
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1 | Headers & Wire Housings 2mm MGrid Rcpt S/E R S/E RA .76AuLF 20Ckt | Other | 87264-2053 |
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09731962907
HARTING
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1 | DIN R male straight 96pin, 13mm tails for wire wrap, PL1 | Other | 09731962907 |
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GRM32ER11H105KA01L
Murata Electronics
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1 | Murata 3225 GRM 1000nF Ceramic Multilayer Capacitor, 50 V dc, +125°C, R Dielectric, ±10% | Capacitor Chip Non-polarised | GRM32ER11H105KA01L |
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GRM216R11H102KA01D
Murata Electronics
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1 | Murata 0805 GRM 1nF Ceramic Multilayer Capacitor, 50 V dc, +125°C, R Dielectric, ±10% | Capacitor Chip Non-polarised | GRM216R11H102KA01D |
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GRM188R11H183KA01D
Murata Electronics
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1 | Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 0.018uF 50volts R 10% | Capacitor Chip Non-polarised | GRM188R11H183KA01D |
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GRM188R11C683KA01D
Murata Electronics
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1 | Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 0.068uF 16volts R 10% | Capacitor Chip Non-polarised | GRM188R11C683KA01D |
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1425600
Phoenix Contact
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1 | SACC-CI-M12FSL-4FE-L180 THR GR R - Contact carrier, Power, 5-position, Socket, straight, M12, L-coding, THR solder connection | Other | 1425600 |
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DXTP22040DFG-7
Diodes Incorporated
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1 | Bipolar Transistors - BJT Pwr Mid Perf Transistor PowerDI3333-8/SWP T and R 2K | Other | DXTP22040DFG-7 |
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GRM188R11H103KA01D
Murata Electronics
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1 | Murata 0603 GRM 10nF Ceramic Multilayer Capacitor, 50 V dc, +125°C, R Dielectric, ±10% | Capacitor Chip Non-polarised | GRM188R11H103KA01D |
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NTCLE350E4303FHB0
Vishay
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1 | NTC (Negative Temperature Coefficient) Thermistors R 30Kohm 1% B 3935K 1% | Other | NTCLE350E4303FHB0 |
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NTCLE350E4502JLB0
Vishay
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1 | NTC (Negative Temperature Coefficient) Thermistors R 5Kohm 5% B 3435K 1% | Other | NTCLE350E4502JLB0 |
3
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