175-R Model Download Search Results
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M39014/02-1320
Yageo Group
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1 | LDD Mil X7R PRF39014, Ceramic, 0.47 uF, 10%, 50 VDC, BX, R (0.01%/1000Hrs), Lead Spacing = 5.08mm | Other | M39014/02-1320 |
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YR1B200RCC
TE Connectivity
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1 | TE Connectivity R Series Axial Through Hole Fixed Resistor 200Ω ±0.1% 0.25W ±15ppm/°C | Inductors, Axial Diameter Horizontal Mounting | YR1B200RCC |
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L-59SURKCGKC
Kingbright
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1 | LED, Green, Red, Through Hole, T-1 3/4 (5mm), 24 °, Round, R 30mA, G 25mA | Other | L-59SURKCGKC |
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MAX986EUK+T
Analog Devices
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1 | MAXIM INTEGRATED PRODUCTS - MAX986EUK+T - COMPARATOR, R TO R, SINGLE, 300NS, SOT23 | SOT23 (5-Pin) | MAX986EUK+T |
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YR1B1K3CC
TE Connectivity
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1 | TE Connectivity R Series Axial Through Hole Fixed Resistor 1.3kΩ ±0.1% 0.25W ±15ppm/°C | Resistors, Axial Diameter Horizontal Mounting | YR1B1K3CC |
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87920-8115
Molex
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1 | Headers & Wire Housings MGrid Hdr DRSW SMT W/Cap T& R 14Ckt | Other | 87920-8115 |
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HFBR-2533Z
Avago Technologies
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1 | Fibre Optic Transmitters, Receivers, Transceivers V-Link Ext Distnce R x Vert RoHS | Other | HFBR-2533Z |
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SKYPER 32 R
Semikron
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1 | Semikron SKYPER 32 R Dual IGBT Gate Driver,, 15A, 14.4 → 15.6 V | Other | SKYPER 32 R |
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791002004
Würth Elektronik
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1 | WE-RCDS Residual Current Detection Sensor DC 6mA residual direct current detecting RDC-M-Module for mode 3 EV charging If the Residual Current Detection Sensor WE-RCDS is used in combination with a residual current device (RCD) of type A to create an electrical protection device, the offering, manufacturing, and/or distribution of the electrical protection device within the scope of patents EP 2 571 128 B3, CN 103 001 175 B, and US 9,397,494 B2 constitutes a patent infringement, unless you have a license fo | Other | 791002004 |
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TC74VHC174F
Toshiba
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1 | High speed: fmax = 175 MHz (typ.) at VCC = 5 V Low power dissipation: ICC = 4 μA (max) at Ta = 25°C High noise immunity: VNIH = VNIL = 28% VCC (min) Power down protection is provided on all inputs. Balanced propagation delays: tpLH ∼− tpHL Wide operating voltage range: VCC (opr) = 2 to 5.5 V Low noise: VOLP = 0.8 V (max) Pin and function compatible with 74ALS174 | Small Outline Packages | TC74VHC174F |
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BYW29-200G
onsemi
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1 | Lead Temperature for Soldering Purposes: 260 C Max. for 10 Seconds; Shipped 50 units per plastic tube; Marking: BYW29-200; Pb-Free Package is Available; Ultrafast 35 Nanosecond Recovery Time; 175 C Operating Junction Temperature; Popular TO-220 Package; Epoxy Meets UL94, VO @ 1/8''; Low Forward Voltage; Low Leakage Current; High Temperature Glass Passivated Junction Mechanical Characteristics:; Case: Epoxy, Molded; Weight: 1.9 grams (approximately); Finish: All External Surfaces Corrosion Resistant and Term | Transistor Outline, Vertical | BYW29-200G |
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STPS20150CR
STMicroelectronics
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1 | 150 V, 20 A dual Power Schottky Rectifier,IF(AV): 2 x 10 A,VRRM: 150 V,Tj(max): 175 °C,VF (typ): 0.69 V. | Other | STPS20150CR |
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STPS15M80CG-TR
STMicroelectronics
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1 | Small Signal Schottky Diode, Dual Common Cathode, 80 V, 15 A, 870 mV, 220 A, 175 °C | Other | STPS15M80CG-TR |
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FFSP0865B
onsemi
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1 | Avalanche Rated 33 mJ; High Surge Current Capacity; Max Junction Temperature 175 °C; Positive Temperature Coefficient; Low Vf @ TJ:175 °C; No Reverse Recovery / No Forward Recovery | Transistor Outline, Vertical | FFSP0865B |
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FFSB1065B-F085
onsemi
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1 | Ease of Paralleling; Positive Temperature Coefficient; High Surge Current Capacity; Avalanche Rated 49 mJ; Max Junction Temperature 175 oC; No Reverse Recovery / No Forward Recovery; AEC-Q101 Qualified | Other | FFSB1065B-F085 |
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RBA015N10R1SBPW#KB0
Renesas Electronics
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1 | REXFET-1 N-Channel Power MOSFET100 V - 340 A - 1.5 mΩ - TOLT for Automotive-55 to 175 °C 409 mJ 409 mJ | Other | RBA015N10R1SBPW#KB0 |
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RBA019N10R1SBPW#KB0
Renesas Electronics
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1 | 100 V - 230 A - 1.9 mΩ - TOLT for Automotive,,2.0 to 4.0 V,1.9 m Max -55 to 175 °C | Other | RBA019N10R1SBPW#KB0 |
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FFSH3065B
onsemi
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1 | Max Junction Temperature 175 °C; Avalanche Rated 144 mJ; High Surge Current Capacity; Positive Temperature Coefficient; No Reverse Recovery / No Forward Recovery; Low Vf @ TJ:175 °C | Transistor Outline, Vertical | FFSH3065B |
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PMN230ENEAX
Nexperia
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1 | • Logic-level compatible• Extended temperature range Tj = 175 °C• Trench MOSFET technology• ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2)• AEC-Q101 qualified | SOT23 (6-Pin) | PMN230ENEAX |
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BZW06-342BRL
STMicroelectronics
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1 | Peak pulse power:– 600 W (10/1000 μs)– up to 4 kW (8/20 μs)• Stand-off voltage range from 5.8 V to 376 V• Unidirectional and bidirectional types• Operating Tj max: 175 °C• High power capability at Tj max.: up to 420 W (10/1000 µs)• Lead finishing: matte tin plating | Diodes, Axial Diameter Horizontal Mounting | BZW06-342BRL |
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BZW04-5V8
STMicroelectronics
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1 | Peak pulse power:– 400 W (10/1000 μs)– up to 2.3 kW (8/20 μs)• Stand-off voltage range from 5.8 V to 376 V• Unidirectional and bidirectional types• Operating Tj max: 175 °C• High power capability at Tj max.: up to 230 W (10/1000 µs)• Lead finishing: matte tin plating | Diodes, Axial Diameter Horizontal Mounting | BZW04-5V8 |
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MUR620CTG
onsemi
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1 | 175 C Operating Junction Temperature; Ultrafast 35 Nanosecond Recovery Time; Popular TO-220 Package Mechanical Characteristics:; Lead Temperature for Soldering Purposes: 260 C Max. for 10 Seconds; Case: Epoxy, Molded; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Weight: 1.9 grams (approximately); Marking: U620 | Transistor Outline, Vertical | MUR620CTG |
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74VHC164MTCX
onsemi
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1 | Power down protection provided on all inputs; High noise immunity: VNIH = VNIL = 28% VCC (min); Low noise: VOLP = 0.8V (max); Low power dissipation: ICC = 4 µA (max) at TA = 25°C; Pin and function compatible with 74HC164; High Speed: fMAX = 175 MHz at VCC = 5V | Small Outline Packages | 74VHC164MTCX |
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ADG1611BCPZ-REEL
Analog Devices
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1 | 1 Ω typical on resistance0.2 Ω on resistance flatness±3.3 V to ±8 V dual-supply operation3.3 V to 16 V single-supply operationNo VL supply required3 V logic-compatible inputsRail-to-rail operationContinuous current per channelLFCSP package: 280 mATSSOP package: 175 mA16-lead TSSOP and 16-lead, 4 mm × 4 mm LFCSP | Quad Flat No-Lead | ADG1611BCPZ-REEL |
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SM30T35AY
STMicroelectronics
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1 | • Peak pulse power:– 3000 W (10/1000 µs)– Up to 36 kW (8/20 µs)• Stand-off voltage range: from 5 V to 48 V• Unidirectional and bidirectional types• Operating Tj max: 175 °C• JEDEC registered package outline• Resin meets UL 94, V0• AEC-Q101 qualified | Diodes Moulded | SM30T35AY |
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![Part Image](["https://componentsearchengine.com/Images/9/M39014_02-1320.jpg",null,null])
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