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MCPWR12FTEA6204
Multicomp Pro
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0 | RESISTOR, 2512 6.2M Ohms ±1% 1/8W | Other | MCPWR12FTEA6204 |
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M10162040108X0PWAY
Renesas Electronics
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1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10162040108X0PWAY |
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M30162040054X0ISAY
Renesas Electronics
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1 | The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30162040054X0ISAY |
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M30162040054X0IWAY
Renesas Electronics
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1 | The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M30162040054X0IWAY |
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ECWF6204HLB
Panasonic
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1 | Metallized Polypropylene Film Capacitor MPP 630v, -40 to 105°C, 0.2µF, 3% (18x10.3x19.7mm) | Other | ECWF6204HLB |
3
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2706-204
Wago
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1 | PCB terminal block; lever; 6 mm²; Pin spacing 10 mm; 4-pole; CAGE CLAMP® | Other | 2706-204 |
3
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M30162040108X0PWAY
Renesas Electronics
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1 | The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M30162040108X0PWAY |
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CRG0402-P-6204FT
Venkel
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1 | RoHS 6/6 Green CR,0402,1/16W,6.2M,±1% | Other | CRG0402-P-6204FT |
2
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4-794620-4
TE Connectivity
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1 | Configuration Features: Number of Rows 2 | PCB Mount Orientation Right Angle | Number of Power Positions 14 | Number of Positions 14 | Contact Features: Multiple Contact Types Without | Contact Mating Area Plating Material Thickness .76 MICM | Contact Current Rating (Max) 5 AMP | PCB Contact Termination Area Plating Material Thickness 150 MICIN | PCB Contact Termination Area Plating Material Tin | Contact Mating Area Plating Material Gold | PCB Contact Termination Area Plating Material Thickness 3.81 MICM | | Other | 4-794620-4 |
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ERJ-PM8F6204V
Panasonic
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1 | Power Rating 0.66W,Resistance 6200000 Ohm,LxW(EIA) 3.2 x 1.6 (EIA:1206) mm | Other | ERJ-PM8F6204V |
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ECWF6204JLB
Panasonic
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1 | Metallized Polypropylene Film Capacitor MPP, 0.2μF ±5 %,630V, (18.0x10.3x19.7) | Other | ECWF6204JLB |
3
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M10162040054X0ISAY
Renesas Electronics
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1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10162040054X0ISAY |
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MRS25000C6204FCT00
Vishay
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1 | Vishay MRS25 Series Axial Thin Film Resistor 6.2MΩ ±1% 0.6W ±50ppm/°C | Resistors, Axial Diameter Horizontal Mounting | MRS25000C6204FCT00 |
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M30162040108X0ISAY
Renesas Electronics
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1 | The M3016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3016204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M30162040108X0ISAY |
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232-262/047-000
Wago
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1 | THT female header; angled; Pin spacing 5.08 mm; 2-pole; Spacer flange; 0.6 x 1.0 mm solder pin | Other | 232-262/047-000 |
3
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M10162040108X0ISAY
Renesas Electronics
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1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10162040108X0ISAY |
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M20-8762042
Harwin
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1 | 2.54mm (0.1") Pitch DIL SMT Pin Header, selective gold + tin, 20+20 contacts | Other | M20-8762042 |
3
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ECWF6204HL
Panasonic
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1 | PANASONIC - ECWF6204HL - General Purpose Film Capacitor, Metallized PP, Radial Box - 2 Pin, 0.2 µF, ± 3%, , 630 V (18 x10.3x 16.2mm) | Other | ECWF6204HL |
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5962-8866204NA
Renesas Electronics
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1 | The 5962-88662 (71256 SRAM) is organized as 32K x 8. This part offers a reduced power standby mode for significant system level power and cooling savings. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. | Ceramic Dual-In-Line Packages | 5962-8866204NA |
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M10162040054X0ISAR
Renesas Electronics
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1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10162040054X0ISAR |
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M10162040108X0ISAR
Renesas Electronics
|
1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10162040108X0ISAR |
3
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M10162040108X0PWAR
Renesas Electronics
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1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10162040108X0PWAR |
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232-762/045-000
Wago
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1 | THT female header; straight; Pin spacing 7.62 mm; 2-pole; 0.6 x 1.0 mm solder pin | Other | 232-762/045-000 |
3
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M80-8262042
Harwin
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1 | Datamate L-Tek DIL Male Vertical SMT Connector, unlatched, selective gold + tin, 10+10 contacts | Other | M80-8262042 |
3
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RK73H1ETTP6204F
KOA Speer
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1 | Thick Film Resistors - SMD 6.2M OHM 1% | Resistor Chip | RK73H1ETTP6204F |
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