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M30082040054X0PSAY
Renesas Electronics
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1 | The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | Check Price & Stock |
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M30082040108X0ISAY
Renesas Electronics
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1 | The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | Check Price & Stock |
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M30082040054X0PWAY
Renesas Electronics
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1 | The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | Check Price & Stock |
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M10082040054X0PWAY
Renesas Electronics
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1 | The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | Check Price & Stock |
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AT30TS75A-SS8M-B
Microchip
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1 | Board Mount Temperature Sensors 1-ch Tmp Snsr I2C - 3.4MHz Ind Hi-Temp | Small Outline Packages | Check Price & Stock |
3
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ADSP-2188MBSTZ-266
Analog Devices
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1 | Analog Devices ADSP-2188MBSTZ-266, 16bit Blackfin Digital Signal Processor 66MHz 48 Kwords RAM 256 kB, 100-Pin LQFP | Quad Flat Packages | Check Price & Stock |
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W956D8MBYA6I
Winbond
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1 | DRAM Chip DDR SDRAM 64Mbit 8Mx8 1.8V 24-Pin TFBGA | BGA | Check Price & Stock |
3
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ISL71218MBZ-T7A
Renesas Electronics
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1 | The ISL71218M is a radiation tolerant dual, low-power precision amplifier optimized for single-supply applications. This op amp features a common-mode input voltage range extending to 0. 5V below the V- rail, a rail-to-rail differential input voltage range, and rail-to-rail output voltage swing, which makes it ideal for single-supply applications where input operation at ground is important. This op amp features low-power, Low-offset voltage, and low-temperature drift, making it ideal for applications requi | Small Outline Packages | Check Price & Stock |
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W956D8MBYA5I
Winbond
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1 | HyperRAM TM has more throughout and smaller form factor size than PSRAM does | BGA | Check Price & Stock |
3
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M30082040108X0PWAY
Renesas Electronics
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1 | The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | Check Price & Stock |
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M30082040108X0ISAR
Renesas Electronics
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1 | The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | Check Price & Stock |
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M10082040108X0ISAR
Renesas Electronics
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1 | The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | Check Price & Stock |
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M10082040054X0PSAY
Renesas Electronics
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1 | The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | Check Price & Stock |
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M10082040108X0PSAR
Renesas Electronics
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1 | The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | Check Price & Stock |
3
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M10082040054X0IWAY
Renesas Electronics
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1 | The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | Check Price & Stock |
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CDRH124-6R8MB
Sumida
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1 | SMD Power Inductor | Other | Check Price & Stock |
3
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DS08MB200TSQ
Texas Instruments
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1 | LVDS MUX/Buffer | Other | Check Price & Stock |
3
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M10082040054X0ISAY
Renesas Electronics
|
1 | The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | Check Price & Stock |
3
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M30082040054X0PWAR
Renesas Electronics
|
1 | The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | Check Price & Stock |
3
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AT30TSE752A-SS8M-B
Microchip
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1 | Microchip AT30TSE752A-SS8M-B, Voltage Temperature Sensor -55 → +125 °C ±3°C, 8-Pin SOIC | Small Outline Packages | Check Price & Stock |
3
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W955K8MBYA5I
Winbond
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1 | DRAM 32Mb HyperRAM x8, 200MHz, Ind temp, 1.8V | BGA | Check Price & Stock |
3
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RMLV0816BGBG-4S2#KC0
Renesas Electronics
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1 | The RMLV0816BGBG is a family of 8-Mbit static RAMs organized 524, 288-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0816BGBG has realized higher density, higher performance and low power consumption. The RMLV0816BGBG offers low power standby power dissipation;therefore, it is suitable for battery backup systems. It is offered in 48-ball fine pitch ball grid array. | BGA | Check Price & Stock |
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SH8MB5TB1
ROHM Semiconductor
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1 | 40V Dual Nch+Pch, SOP8, Power MOSFET | Small Outline Packages | Check Price & Stock |
3
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GBU8M-BP
MCC
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1 | Bridge Rectifier Single Phase Standard 1 kV Through Hole GBU | Other | Check Price & Stock |
3
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QH8MB5
ROHM Semiconductor
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1 | 40V 4.5A/5.0A, Dual Nch+Pch, TSMT8, Power MOSFET | SO Transistor Flat Lead | Check Price & Stock |
3
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