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ESP32-WROOM-32E (8MB) Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
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M30082040054X0PSAY Renesas Electronics
1 The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. Small Outline Packages Check Price & Stock 1 Download Model
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M30082040108X0ISAY Renesas Electronics
1 The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. Small Outline Packages Check Price & Stock 1 Download Model
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M30082040054X0PWAY Renesas Electronics
1 The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. Small Outline No-lead Check Price & Stock 1 Download Model
Part Image Part Image
M10082040054X0PWAY Renesas Electronics
1 The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from  -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. Small Outline No-lead Check Price & Stock 1 Download Model
Part Image Part Image 1 Board Mount Temperature Sensors 1-ch Tmp Snsr I2C - 3.4MHz Ind Hi-Temp Small Outline Packages Check Price & Stock 1 Download Model
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ADSP-2188MBSTZ-266 Analog Devices
1 Analog Devices ADSP-2188MBSTZ-266, 16bit Blackfin Digital Signal Processor 66MHz 48 Kwords RAM 256 kB, 100-Pin LQFP Quad Flat Packages Check Price & Stock 1 Download Model
Part Image Part Image 1 DRAM Chip DDR SDRAM 64Mbit 8Mx8 1.8V 24-Pin TFBGA BGA Check Price & Stock 1 Download Model
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ISL71218MBZ-T7A Renesas Electronics
1 The ISL71218M is a radiation tolerant dual, low-power precision amplifier optimized for single-supply applications. This op amp features a common-mode input voltage range extending to 0. 5V below the V- rail, a rail-to-rail differential input voltage range, and rail-to-rail output voltage swing, which makes it ideal for single-supply applications where input operation at ground is important. This op amp features low-power, Low-offset voltage, and low-temperature drift, making it ideal for applications requi Small Outline Packages Check Price & Stock 1 Download Model
Part Image Part Image 1 HyperRAM TM has more throughout and smaller form factor size than PSRAM does BGA Check Price & Stock 1 Download Model
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M30082040108X0PWAY Renesas Electronics
1 The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. Small Outline No-lead Check Price & Stock 1 Download Model
Part Image Part Image
M30082040108X0ISAR Renesas Electronics
1 The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. Small Outline Packages Check Price & Stock 1 Download Model
Part Image Part Image
M10082040108X0ISAR Renesas Electronics
1 The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from  -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. Small Outline Packages Check Price & Stock 1 Download Model
Part Image Part Image
M10082040054X0PSAY Renesas Electronics
1 The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from  -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. Small Outline Packages Check Price & Stock 1 Download Model
Part Image Part Image
M10082040108X0PSAR Renesas Electronics
1 The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from  -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. Small Outline Packages Check Price & Stock 1 Download Model
Part Image Part Image
M10082040054X0IWAY Renesas Electronics
1 The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from  -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. Small Outline No-lead Check Price & Stock 1 Download Model
Part Image Part Image 1 SMD Power Inductor Other Check Price & Stock 1 Download Model
Part Image Part Image
DS08MB200TSQ Texas Instruments
1 LVDS MUX/Buffer Other Check Price & Stock 1 Download Model
Part Image Part Image
M10082040054X0ISAY Renesas Electronics
1 The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from  -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. Small Outline Packages Check Price & Stock 1 Download Model
Part Image Part Image
M30082040054X0PWAR Renesas Electronics
1 The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. Small Outline No-lead Check Price & Stock 1 Download Model
Part Image Part Image 1 Microchip AT30TSE752A-SS8M-B, Voltage Temperature Sensor -55 → +125 °C ±3°C, 8-Pin SOIC Small Outline Packages Check Price & Stock 1 Download Model
Part Image Part Image 1 DRAM 32Mb HyperRAM x8, 200MHz, Ind temp, 1.8V BGA Check Price & Stock 1 Download Model
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RMLV0816BGBG-4S2#KC0 Renesas Electronics
1 The RMLV0816BGBG is a family of 8-Mbit static RAMs organized 524, 288-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0816BGBG has realized higher density, higher performance and low power consumption. The RMLV0816BGBG offers low power standby power dissipation;therefore, it is suitable for battery backup systems. It is offered in 48-ball fine pitch ball grid array. BGA Check Price & Stock 1 Download Model
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SH8MB5TB1 ROHM Semiconductor
1 40V Dual Nch+Pch, SOP8, Power MOSFET Small Outline Packages Check Price & Stock 1 Download Model
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1 Bridge Rectifier Single Phase Standard 1 kV Through Hole GBU Other Check Price & Stock 1 Download Model
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QH8MB5 ROHM Semiconductor
1 40V 4.5A/5.0A, Dual Nch+Pch, TSMT8, Power MOSFET SO Transistor Flat Lead Check Price & Stock 1 Download Model
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